Field effect transistor with narrow bandgap source and drain regions and method of fabrication
First Claim
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1. A transistor comprising:
- a substrate including a silicon body having a top surface opposite a bottom surface and a pair of sidewalls;
a gate dielectric layer on the silicon body along the top surface and the pair of sidewalls of the silicon body;
a gate electrode on the gate dielectric layer along the top surface and the pair of sidewalls of the silicon body; and
a pair of source/drain regions on the silicon body on opposite sides of the gate electrode, the pair of source/drain regions comprising a semiconductor film having a bandgap of less than 0.75 eV.
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Abstract
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
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20 Claims
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1. A transistor comprising:
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a substrate including a silicon body having a top surface opposite a bottom surface and a pair of sidewalls; a gate dielectric layer on the silicon body along the top surface and the pair of sidewalls of the silicon body; a gate electrode on the gate dielectric layer along the top surface and the pair of sidewalls of the silicon body; and a pair of source/drain regions on the silicon body on opposite sides of the gate electrode, the pair of source/drain regions comprising a semiconductor film having a bandgap of less than 0.75 eV. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification