Connector design for packaging integrated circuits

• US 8,664,760 B2
• Filed: 01/04/2012
• Issued: 03/04/2014
• Est. Priority Date: 05/30/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yu, Chen-Hua, Jeng, Shin-Puu, Hou, Shang-Yun, Hsieh, Cheng-Chieh, Hsu, Kuo-Ching, Shih, Ying-Ching, Tsai, Po-Hao, Kao, Chin-Fu, Huang, Cheng-Lin, Lin, Jing-Cheng
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/343,582
• Publication Number:
  US 20120306073A1
• Time in Patent Office: 790 Days
• Field of Search: 257/737, 257/738, 257/E23.021, 257/E23.033, 257/E23.068, 257/E23.069
• US Class Current: 257/737
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/03912 the bump being used as a mask for patterning the bonding area
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05681 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05686 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/10145 Flow barriers
• CPC Class Codes: H01L 2224/10156 Bump collar
• CPC Class Codes: H01L 2224/1146 Plating
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/1182 Applying permanent coating, e.g. in-situ coating
• CPC Class Codes: H01L 2224/11831 : involving a chemical process, e.g. etching the bump connector
• CPC Class Codes: H01L 2224/13017 : being non uniform along the bump connector
• CPC Class Codes: H01L 2224/1308 : being stacked
• CPC Class Codes: H01L 2224/13082 : Two-layer arrangements
• CPC Class Codes: H01L 2224/13083 : Three-layer arrangements
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13565 : Only outside the bonding interface of the bump connector
• CPC Class Codes: H01L 2224/13578 : being disposed next to each other, e.g. side-to-side arrangements
• CPC Class Codes: H01L 2224/13686 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/16058 : being non uniform along the bump connector
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 23/147 : Semiconductor insulating substrates semiconductor conductive substrates H01L23/4926
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/04 : the devices not having separate containers
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/049 : Nitrides composed of metals from groups of the periodic table
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/053 : Oxides composed of metals from groups of the periodic table
• CPC Class Codes: H01L 2924/3651 : Formation of intermetallics
• CPC Class Codes: H01L 2924/3841 : Solder bridging

Abstract

A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.

Claims

1. A device comprising:

a top dielectric layer having a top surface;

a metal pillar comprising a portion over the top surface of the top dielectric layer;

a metal cap over the metal pillar, wherein a portion of the metal cap is aligned to the metal pillar, and wherein the metal cap has a lateral size greater than a lateral size of the metal pillar;

a first non-wetting layer on a sidewall of the metal cap, wherein the first non-wetting layer is not wettable to molten solder; and

a solder region over and electrically coupled to the metal cap.

2. The device of claim 1 further comprising a second non-wetting layer on a sidewall of the metal pillar, wherein the second non-wetting layer is not wettable to molten solder, and wherein the second non-wettable layer comprises materials for forming the metal pillar and an element selected from the group consisting essentially of nitrogen, oxygen, and combinations thereof.

3. The device of claim 2, wherein the metal cap and the metal pillar comprise different materials, and wherein the second non-wetting layer does not extend between the metal cap and the metal pillar.

4. The device of claim 1, wherein the first non-wetting layer does not extend between the metal cap and the solder region.

5. The device of claim 1 wherein the first non-wettable layer comprises materials of the metal cap and an element selected from the group consisting essentially of nitrogen, oxygen, and combinations thereof.

6. The device of claim 1, wherein the top dielectric layer and the metal pillar are comprised in a device die, wherein the device further comprises a package component bonded to the device die through the solder region.

7. A device comprising:

a metal pillar comprising a portion over a top surface of a top dielectric layer;

a metal cap over the metal pillar, wherein a portion of the metal cap is aligned to the metal pillar, and wherein the metal cap has a lateral size greater than a lateral size of the metal pillar;

a first non-wetting layer on a sidewall of the metal cap, wherein the first non-wetting layer is not wettable to molten solder; and

a solder region over and electrically coupled to the metal cap, wherein the first non-wetting layer does not extend between the metal cap and the solder region.

8. The device of claim 7 further comprising a second non-wetting layer on a sidewall of the metal pillar, wherein the second non-wetting layer is not wettable to molten solder, and wherein the second non-wettable layer comprises materials for forming the metal pillar and an element selected from the group consisting essentially of nitrogen, oxygen, and combinations thereof.

9. The device of claim 8, wherein the metal cap and the metal pillar comprise different materials, and wherein the second non-wetting layer does not extend between the metal cap and the metal pillar.

10. The device of claim 7, wherein the first non-wettable layer comprises materials of the metal cap and an element selected from the group consisting essentially of nitrogen, oxygen, and combinations thereof.

11. The device of claim 7, wherein the top dielectric layer and the metal pillar are comprised in a device die, wherein the device further comprises a package component bonded to the device die through the solder region.