Arrangement and method for generating mixed light

• US 8,664,847 B2
• Filed: 01/30/2008
• Issued: 03/04/2014
• Est. Priority Date: 02/02/2007
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Groetsch, Stefan, Bogner, Georg, Hahn, Berthold, Haerle, Volker, Petersen, Kirstin
• Primary Examiner(s): Mai, Anh
• Assistant Examiner(s): FEATHERLY, HANA SANEI
• Application Number:
  US12/524,890
• Publication Number:
  US 20100084964A1
• Time in Patent Office: 2,225 Days
• Field of Search: 313/502
• US Class Current: 313/502
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

At least two semiconductor components emit electromagnetic radiation in different wavelength ranges. The superimposition of these electromagnetic radiations of all semiconductor components has at least one fraction in the visible wavelength range. At least one of the semiconductor components has a luminescence conversion element in the beam path.

Claims

1. An arrangement for generating mixed light, the arrangement comprising:

at least two semiconductor components emitting electromagnetic radiation in different wavelength ranges, each semiconductor component comprising a semiconductor chip and being used as a light source,

wherein at least one of the semiconductor components has a luminescence conversion element in a beam path, the luminescence conversion element converting a primary wavelength, emitted from a semiconductor chip, into a secondary wavelength, and

wherein the arrangement comprises a filter arranged in the beam path between the semiconductor chip and the luminescence conversion element, wherein the filter and the luminescence conversion element are arranged directly contacting one behind the other in the beam path, the filter being more transmissive for the primary wavelength than for the secondary wavelength and more reflective for the secondary wavelength than for the primary wavelength.

2. The arrangement according to claim 1, wherein the semiconductor component having a luminescence conversion element generates a short-wavelength primary wavelength in an invisible wavelength range.

3. The arrangement according to claim 2, wherein a generated converted secondary wavelength lies in a wavelength range of 430 nm to 760 nm.

4. The arrangement according to claim 1, wherein the semiconductor component having a luminescence conversion element generates a short-wavelength primary wavelength in a visible wavelength range.

5. The arrangement according to claim 1, wherein the arrangement comprises a white light source for an illumination device on image reproduction equipment.

6. The arrangement according to claim 1, wherein the luminescence conversion element contains silicates or oxynitrides, or green-converting phosphors that absorb in blue or ultraviolet ranges for conversion.

7. The arrangement according to claim 1, wherein the luminescence conversion element is produced in a potted volume with the semiconductor chip of one of the semiconductor components.

8. The arrangement according to claim 7, further comprising a reflective element inside a housing, the reflective element being inserted into the beam path of the semiconductor chip in such a manner that a primary wavelength is reflected, the reflective element being transparent to a secondary wavelength.

9. The arrangement according to claim 7, wherein the semiconductor chip minimally absorbs and maximally reflects a primary wavelength generated and reflected on the potted volume.

10. The arrangement according to claim 7, wherein the semiconductor chip minimally absorbs and maximally reflects a converted secondary wavelength.

11. The arrangement according to claim 7, wherein the potted volume around the semiconductor components is coated with the luminescence conversion element.

12. The arrangement according to claim 1, wherein the luminescence conversion element is placed directly on the semiconductor chip in the form of a coating.

13. The arrangement according to claim 1, wherein the luminescence conversion element comprises a covering of a component housing of the semiconductor component.