Gas delivery apparatus and method for atomic layer deposition

• US 8,668,776 B2
• Filed: 06/10/2010
• Issued: 03/11/2014
• Est. Priority Date: 10/26/2001
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chen, Ling, Ku, Vincent, Wu, Dien-Yeh, Chung, Hua, Ouye, Alan, Nakashima, Norman
• Primary Examiner(s): MOORE, KARLA A
• Application Number:
  US12/797,999
• Publication Number:
  US 20100247767A1
• Time in Patent Office: 1,370 Days
• Field of Search: 118/715, 156/345.33, 156/345.34
• US Class Current: 118/715
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4411 Cooling of the reaction chamber walls C23C16/45572 takes precedence
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45504 Laminar flow
• CPC Class Codes: C23C 16/45508 Radial flow
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/45582 Expansion of gas before it reaches the substrate
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76871 Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers

Abstract

Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Claims

1. A lid for a processing chamber, comprising:

a gradually expanding channel at a central portion of the lid;

a tapered bottom surface extending from the gradually expanding channel to a peripheral portion of the chamber lid;

a first conduit coupled to a first gas inlet within the gradually expanding channel; and

a second conduit coupled to a second gas inlet within the gradually expanding channel, wherein the first conduit and the second conduit are positioned to provide a gas flow selected from the group of vortex, helix, and spiral through the gradually expanding channel.

2. The lid of claim 1, further comprising a temperature control element.

3. The lid of claim 1, wherein the first and second conduits are positioned to direct a gas flow toward a surface of the gradually expanding channel.

4. The lid of claim 3, wherein the tapered bottom surface is tapered in a straight, convex, or concave manner, or a combination thereof.

5. The lid of claim 1, wherein the tapered bottom surface is tapered in a straight, convex, or concave manner, or a combination thereof.

6. The lid of claim 1, wherein the tapered bottom surface has a funnel shape.

7. The lid of claim 1, further comprising a plate portion coupled to a cap portion, wherein the plate portion and the cap portion together form the gradually expanding channel.

8. The lid of claim 7, wherein the plate portion defined the tapered bottom surface.

9. A chamber for processing substrates, comprising:

a chamber lid, comprising;

a gradually expanding channel at a central portion of the chamber lid;

a tapered bottom surface extending from the gradually expanding channel to a peripheral portion of the chamber lid;

a first conduit coupled to a first gas inlet within the gradually expanding channel; and

a second conduit coupled to a second gas inlet within the gradually expanding channel, wherein the first conduit and the second conduit are positioned to provide a gas flow selected from the group of vortex, helix, and spiral through the gradually expanding channel.

10. The chamber of claim 9, further comprising a heated substrate support.

11. The chamber of claim 10, wherein a first valve is coupled to the first conduit and a second valve is coupled to the second conduit, and the first and second valves enable an atomic layer deposition process with a pulse time of about 1 second or less.

12. The chamber of claim 9, wherein a first valve is coupled to the first conduit and a second valve is coupled to the second conduit, and the first and second valves enable an atomic layer deposition process with a pulse time of about 1 second or less.

13. The chamber of claim 12, wherein a first gas source is in fluid communication with the first conduit and the first valve, and a second gas source is in fluid communication with the second conduit and the second valve.

14. The chamber of claim 9, wherein the chamber lid further comprises a heating element.