Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a first insulating film over a substrate;
performing oxygen doping treatment on the first insulating film;
forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film;
forming a second insulating film over the source electrode, the drain electrode, and the oxide semiconductor film;
performing oxygen doping treatment on the second insulating film; and
forming a gate electrode over the second insulating film so that the gate electrode overlaps with the oxide semiconductor film.
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Abstract
An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of: forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film. The manufacturing method allows the formation of a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability.
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Citations
22 Claims
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1. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming a first insulating film over a substrate; performing oxygen doping treatment on the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film; forming a second insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; performing oxygen doping treatment on the second insulating film; and forming a gate electrode over the second insulating film so that the gate electrode overlaps with the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming a first insulating film over a substrate; performing oxygen doping treatment on the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film; performing oxygen doping treatment on the oxide semiconductor film; forming a second insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; performing oxygen doping treatment on the second insulating film; and forming a gate electrode over the second insulating film so that the gate electrode overlaps with the oxide semiconductor film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming a first insulating film over a substrate, the first insulating film comprising aluminum oxide; performing oxygen doping treatment on the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film; forming a second insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; and forming a gate electrode over the second insulating film so that the gate electrode overlaps with the oxide semiconductor film. - View Dependent Claims (20, 21, 22)
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Specification