×

Through-wafer interconnects for photoimager and memory wafers

  • US 8,669,179 B2
  • Filed: 07/11/2013
  • Issued: 03/11/2014
  • Est. Priority Date: 09/02/2004
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of forming a microelectronic assembly, the method comprising:

  • exposing at least a portion of a first surface of a bond-site covered by a passivation layer, wherein the bond-site has a second surface opposite the first surface that faces a front side of a substrate;

    disposing a first conductive layer on at least a portion of the first surface of the bond-site;

    exposing at least a portion of the front side of the substrate through the bond-site;

    forming a via in the substrate extending to an intermediate depth from the front side of the substrate;

    disposing a dielectric on a sidewall of the via and on the first conductive layer;

    removing the dielectric from an uppermost surface of the assembly;

    applying a second conductive material on the dielectric;

    filling the via with a third conductive material; and

    exposing the third conductive material from a back side of the substrate.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×