Semiconductor device and manufacturing method thereof

• US 8,669,550 B2
• Filed: 08/01/2008
• Issued: 03/11/2014
• Est. Priority Date: 09/29/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akimoto, Kengo, Honda, Tatsuya, Sone, Norihito
• Primary Examiner(s): EVERHART, CARIDAD
• Application Number:
  US12/184,388
• Publication Number:
  US 20090008639A1
• Time in Patent Office: 2,048 Days
• Field of Search: 257/43, 257/59, 257/E29.288, 257/E29.273, 257/E29.202, 257/E49.004, 257/E2.288, 349/46
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/428 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Claims

1. A semiconductor device comprising:

a gate electrode over a substrate, the gate electrode having a taper shape;

an insulating film over the gate electrode;

an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;

a channel protective film over the oxide semiconductor film;

a source electrode and a drain electrode over the channel protective film, wherein each of the source electrode and the drain electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr) and titanium (Ti); and

a passivation film comprising an insulating material over at least the source electrode, the drain electrode, the channel protective film and the oxide semiconductor film,

wherein the oxide semiconductor film comprises an oxide semiconductor comprising indium, gallium and zinc, and

wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.

2. The semiconductor device according to claim 1 wherein the substrate is a resin substrate.

3. The semiconductor device according to claim 1 wherein the passivation film comprises silicon oxide.

4. The semiconductor device according to claim 1, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises silicon oxide.

5. The semiconductor device according to claim 1, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises aluminum oxide.

6. The semiconductor device according to claim 1, wherein the passivation film comprises silicon nitride.

7. The semiconductor device according to claim 1,

wherein the insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide, and

wherein the insulating film is in contact with the oxide semiconductor film.

8. The semiconductor device according to claim 1, wherein

the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

9. The semiconductor device according to claim 1, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film,

wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

10. The semiconductor device according to claim 1, wherein the oxide semiconductor is InGaO₃(ZnO)₅.

11. The semiconductor device according to claim 1, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film.

12. The semiconductor device according to claim 1, wherein each of the source electrode and the drain electrode comprises a conductive film comprising one of aluminum and aluminum alloy.

13. The semiconductor device according to claim 1, wherein each of the source electrode and the drain electrode comprises a metal nitride film.

14. The semiconductor device according to claim 1 wherein the oxide semiconductor film has a thickness of 200 nm or less.

15. The semiconductor device according to claim 14, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

27. The semiconductor device according to claim 15, wherein each of the source electrode and the drain electrode comprises a conductive film comprising one of aluminum and aluminum alloy.

16. A semiconductor device comprising:

a gate electrode over a substrate, the gate electrode having a taper shape;

an insulating film over the gate electrode;

an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;

a source electrode and a drain electrode over the oxide semiconductor film, wherein each of the source electrode and the drain electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr) and titanium (Ti); and

a passivation film comprising an insulating material over at least the source electrode, the drain electrode and the oxide semiconductor film,

wherein the oxide semiconductor film comprises an oxide semiconductor comprising indium, gallium and zinc, and

wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.

17. The semiconductor device according to claim 16, wherein the substrate is a resin substrate.

18. The semiconductor device according to claim 16, wherein the passivation film comprises silicon oxide.

19. The semiconductor device according to claim 16, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises silicon oxide.

20. The semiconductor device according to claim 16, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises aluminum oxide.

21. The semiconductor device according to claim 16, wherein the passivation film comprises silicon nitride.

22. The semiconductor device according to claim 16,

wherein the insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide, and

wherein the insulating film is in contact with the oxide semiconductor film.

23. The semiconductor device according to claim 16, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

24. The semiconductor device according to claim 16, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film,

wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

25. The semiconductor device according to claim 16, wherein the oxide semiconductor is InGaO₃(ZnO)₅.

26. The semiconductor device according to claim 16, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film.

28. The semiconductor device according to claim 16, wherein each of the source electrode and the drain electrode comprises a metal nitride film.

29. The semiconductor device according to claim 16, wherein the oxide semiconductor film has a thickness of 200 nm or less.

30. The semiconductor device according to claim 29, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

31. A semiconductor device comprising:

a gate electrode over a substrate, the gate electrode having a taper shape;

an insulating film over the gate electrode;

an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;

a source electrode and a drain electrode over the oxide semiconductor film, wherein each of the source electrode and the drain electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr) and titanium (Ti); and

a passivation film comprising an insulating material over at least the source electrode, the drain electrode and the oxide semiconductor film,

wherein the passivation film is in direct contact with at least upper surfaces of the source electrode and the drain electrode and an upper surface of the oxide semiconductor film between the source electrode and the drain electrode,

wherein the oxide semiconductor film comprises an oxide semiconductor comprising indium, gallium and zinc, and

wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.

32. The semiconductor device according to claim 31, wherein the passivation film comprises silicon oxide.

33. The semiconductor device according to claim 31, wherein each of the source electrode and the drain electrode comprises a metal nitride film.

34. The semiconductor device according to claim 31, wherein the oxide semiconductor is InGaO₃(ZnO)₅.

35. The semiconductor device according to claim 31, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises silicon oxide.

36. The semiconductor device according to claim 31, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises aluminum oxide.

37. The semiconductor device according to claim 31, wherein the passivation film comprises silicon nitride.

38. The semiconductor device according to claim 31,

wherein the insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide, and

wherein the insulating film is in contact with the oxide semiconductor film.

39. The semiconductor device according to claim 31, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

40. The semiconductor device according to claim 31, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film.

41. The semiconductor device according to claim 31, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film,

wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

42. The semiconductor device according to claim 31, wherein each of the source electrode and the drain electrode comprises a conductive film comprising one of aluminum and aluminum alloy.

43. The semiconductor device according to claim 31, wherein the substrate is a resin substrate.

44. The semiconductor device according to claim 31, further comprising:

a second gate electrode over the substrate,

wherein the gate electrode and the second gate electrode are connected to each other,

wherein the insulating film is provided over the second gate electrode, and

wherein the oxide semiconductor film is provided over the second gate electrode with the insulating film interposed between the oxide semiconductor film and the second gate electrode.

45. The semiconductor device according to claim 31, wherein the oxide semiconductor film has a thickness of 200 nm or less.

46. The semiconductor device according to claim 45, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

47. A semiconductor device comprising:

a gate electrode over a substrate, the gate electrode having a taper shape;

an insulating film adjacent to the gate electrode;

an oxide semiconductor film adjacent to the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;

a channel protective film over the oxide semiconductor film;

a source electrode and a drain electrode over the channel protective film, wherein each of the source electrode and the drain electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr) and titanium (Ti); and

a passivation film comprising an insulating material over at least the source electrode, the drain electrode, the channel protective film and the oxide semiconductor film,

wherein the oxide semiconductor film comprises an oxide semiconductor comprising indium, gallium and zinc, and

wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.

48. The semiconductor device according to claim 47, wherein the substrate is a resin substrate.

49. The semiconductor device according to claim 47, wherein the passivation film comprises silicon oxide.

50. The semiconductor device according to claim 47, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises silicon oxide.

51. The semiconductor device according to claim 47, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises aluminum oxide.

52. The semiconductor device according to claim 47, wherein the passivation film comprises silicon nitride.

53. The semiconductor device according to claim 47,

wherein the insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide, and

wherein the insulating film is in contact with the oxide semiconductor film.

54. The semiconductor device according to claim 47, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

55. The semiconductor device according to claim 47, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film,

wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

56. The semiconductor device according to claim 47, wherein the oxide semiconductor is InGaO₃(ZnO)₅.

57. The semiconductor device according to claim 47, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film.

58. The semiconductor device according to claim 47, wherein each of the source electrode and the drain electrode comprises a conductive film comprising one of aluminum and aluminum alloy.

59. The semiconductor device according to claim 47, wherein each of the source electrode and the drain electrode comprises a metal nitride film.

60. The semiconductor device according to claim 47, wherein the oxide semiconductor film has a thickness of 200 nm or less.

61. The semiconductor device according to claim 60, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

62. A semiconductor device comprising:

a gate electrode over a substrate, the gate electrode having a taper shape;

an insulating film adjacent to the gate electrode;

an oxide semiconductor film adjacent to the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;

a source electrode and a drain electrode over the oxide semiconductor film, wherein each of the source electrode and the drain electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr) and titanium (Ti); and

a passivation film comprising an insulating material over at least the source electrode, the drain electrode, and the oxide semiconductor film,

wherein the oxide semiconductor film comprises an oxide semiconductor comprising indium, gallium and zinc, and

wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.

63. The semiconductor device according to claim 62 wherein the passivation film comprises silicon oxide.

64. The semiconductor device according to claim 62, wherein the oxide semiconductor is InGaO₃(ZnO)₅.

65. The semiconductor device according to claim 62, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises silicon oxide.

66. The semiconductor device according to claim 62, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises aluminum oxide.

67. The semiconductor device according to claim 62, wherein the passivation film comprises silicon nitride.

68. The semiconductor device according to claim 62,

wherein the insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide, and

wherein the insulating film is in contact with the oxide semiconductor film.

69. The semiconductor device according to claim 62, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

70. The semiconductor device according to claim 62, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film,

wherein the pair of transparent conductive oxide films comprise a material selected from the group consisting of indium tin oxide, indium zinc oxide, indium tin oxide containing silicon oxide, indium oxide, tin oxide, zinc oxide, zinc oxide added with aluminum, and zinc oxide added with gallium.

71. The semiconductor device according to claim 62, further comprising:

a pair of transparent conductive oxide films over and in contact with the oxide semiconductor film.

72. The semiconductor device according to claim 62, wherein each of the source electrode and the drain electrode comprises a conductive film comprising one of aluminum and aluminum alloy.

73. The semiconductor device according to claim 62, wherein each of the source electrode and the drain electrode comprises a metal nitride film.

74. The semiconductor device according to claim 62, wherein the substrate is a resin substrate.

75. The semiconductor device according to claim 62 wherein the oxide semiconductor film has a thickness of 200 nm or less.

76. The semiconductor device according to claim 75, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

77. A semiconductor device comprising:

a gate electrode over a substrate, the gate electrode having a taper shape;

an insulating film adjacent to the gate electrode;

an oxide semiconductor film adjacent to the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;

a source electrode and a drain electrode which are adjacent to the oxide semiconductor film, wherein each of the source electrode and the drain electrode comprises a metal nitride, the metal being one selected from the group consisting of tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr) and titanium (Ti); and

a passivation film comprising an insulating material over at least the source electrode, the drain electrode, and the oxide semiconductor film,

wherein the oxide semiconductor film comprises an oxide semiconductor comprising indium, gallium and zinc, and

wherein an amorphous state and a crystalline state exist in the oxide semiconductor film.

78. The semiconductor device according to claim 77, wherein the substrate is a resin substrate.

79. The semiconductor device according to claim 77, wherein the oxide semiconductor film has a thickness of 200 nm or less.

80. The semiconductor device according to claim 77, wherein the oxide semiconductor film has a thickness of 25 to 200 nm.

81. The semiconductor device according to claim 77, wherein the passivation film comprises silicon oxide.

82. The semiconductor device according to claim 77, wherein the passivation film comprises silicon nitride.

83. The semiconductor device according to claim 77, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises silicon oxide.

84. The semiconductor device according to claim 77, further comprising a second insulating film over the insulating film and under the oxide semiconductor film,

wherein the insulating film comprises silicon nitride, and

wherein the second insulating film comprises aluminum oxide.

85. The semiconductor device according to claim 77,

wherein the insulating film comprises a material selected from the group consisting of aluminum oxide, aluminum nitride, titanium oxide and zirconium oxide, and

wherein the insulating film is in contact with the oxide semiconductor film.

86. The semiconductor device according to claim 77, wherein the passivation film comprises a material selected from the group consisting of aluminum oxide and aluminum oxynitride.

87. The semiconductor device according to claim 77, wherein the oxide semiconductor is InGaO₃(ZnO)₅.

88. The semiconductor device according to claim 77, wherein the semiconductor device is a liquid crystal display device.

89. The semiconductor device according to claim 77, wherein the semiconductor device is a computer.