Transistor including insertion layer and channel layer with different work functions and method of manufacturing the same
First Claim
Patent Images
1. A transistor comprising:
- a channel layer;
a source and a drain respectively contacting opposing ends of the channel layer;
a gate electrode isolated from the channel layer;
a gate insulating layer between the channel layer and the gate electrode; and
an insertion layer between the channel layer and the gate insulating layer, the insertion layer having a work function different from that of the channel layer, the insertion layer being formed of a different base material from the channel layer, the insertion layer being a semiconductor layer, the insertion layer being formed of a single layer, and the insertion layer directly contacting the channel layer and the gate insulating layer,wherein the channel layer is an n-type semiconductor layer and the insertion layer is a p-type or an n-type semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A transistor according to example embodiments may include a channel layer, a source and a drain respectively contacting ends of the channel layer, a gate electrode separated from the channel layer, a gate insulating layer interposed between the channel layer and the gate electrode, and/or an insertion layer that is formed between the channel layer and the gate insulating layer. The insertion layer may have a work function different from that of the channel layer.
-
Citations
20 Claims
-
1. A transistor comprising:
-
a channel layer; a source and a drain respectively contacting opposing ends of the channel layer; a gate electrode isolated from the channel layer; a gate insulating layer between the channel layer and the gate electrode; and an insertion layer between the channel layer and the gate insulating layer, the insertion layer having a work function different from that of the channel layer, the insertion layer being formed of a different base material from the channel layer, the insertion layer being a semiconductor layer, the insertion layer being formed of a single layer, and the insertion layer directly contacting the channel layer and the gate insulating layer, wherein the channel layer is an n-type semiconductor layer and the insertion layer is a p-type or an n-type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 11, 12, 18)
-
-
7. A transistor comprising:
-
a channel layer; a source and a drain respectively contacting opposing ends of the channel layer; a gate electrode isolated from the channel layer; a gate insulating layer between the channel layer and the gate electrode; and an insertion layer between the channel layer and the gate insulating layer, the insertion layer having a work function different from that of the channel layer, the insertion layer being formed of a different base material from the channel layer, the insertion layer being a semiconductor layer, the insertion layer being formed of a single layer, and the insertion layer directly contacting the channel layer and the gate insulating layer, wherein the channel layer is a p-type semiconductor layer and the insertion layer is an n-type or a p-type semiconductor layer. - View Dependent Claims (8, 9, 10)
-
-
13. A method of manufacturing a transistor, comprising:
-
forming a channel layer and a gate electrode on a substrate, the channel layer isolated from the gate electrode; forming a source and a drain on the substrate, the source and the drain respectively contacting opposing ends of the channel layer; forming a gate insulating layer between the channel layer and the gate electrode; and forming an insertion layer between the channel layer and the gate insulating layer, the insertion layer having a work function different from that of the channel layer, the insertion layer being formed of a different base material from the channel layer, the insertion layer being a semiconductor layer, the insertion layer being formed of a single layer, and the insertion layer directly contacting the channel layer and the gate insulating layer, wherein the channel layer is an n-type or a p-type semiconductor layer and the insertion layer is a p-type or an n-type semiconductor layer. - View Dependent Claims (14, 15, 16, 17, 19)
-
-
20. A transistor comprising:
-
a channel layer; a source and a drain respectively contacting opposing ends of the channel layer; a gate electrode isolated from the channel layer; a gate insulating layer between the channel layer and the gate electrode; and an insertion layer between the channel layer and the gate insulating layer, the insertion layer having a work function different from that of the channel layer, the insertion layer being formed of a different base material from the channel layer, and the insertion layer being a semiconductor layer, wherein when the channel layer is an n-type semiconductor layer, the insertion layer has a work function greater than that of the channel layer and has an energy band gap greater than that of the channel layer, and when the channel layer is a p-type semiconductor layer, the insertion layer has a work function smaller than that of the channel layer and has an energy band gap smaller than that of the channel layer, wherein the channel layer is an n-type or a p-type semiconductor layer and the insertion layer is a p-type or an n-type semiconductor layer.
-
Specification