Semiconductor device
First Claim
1. A semiconductor device comprising:
- a gate electrode;
an oxide semiconductor film comprising a crystalline region; and
a gate insulating film between the gate electrode and the oxide semiconductor film,wherein the crystalline region has a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film,wherein the oxide semiconductor film is in a non-single-crystal state, andwherein the oxide semiconductor film does not comprise a crystal boundary at an interface of the crystalline region.
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Accused Products
Abstract
An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
254 Citations
20 Claims
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1. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film comprising a crystalline region; and a gate insulating film between the gate electrode and the oxide semiconductor film, wherein the crystalline region has a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film, wherein the oxide semiconductor film is in a non-single-crystal state, and wherein the oxide semiconductor film does not comprise a crystal boundary at an interface of the crystalline region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film comprising a crystalline region; and a gate insulating film between the gate electrode and the oxide semiconductor film, wherein the crystalline region has a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film, wherein the oxide semiconductor film is in a non-single-crystal state, and wherein the oxide semiconductor film does not comprise a crystal boundary at an interface where the crystalline region and an adjacent crystalline region are in contact with each other. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification