LED that has bounding silicon-doped regions on either side of a strain release layer

• US 8,669,585 B1
• Filed: 09/01/2012
• Issued: 03/11/2014
• Est. Priority Date: 09/03/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Toshiba Techno Center Inc. (Toshiba Corporation)
• Inventors: Chen, Zhen, Fu, Yi
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): Reida, Molly
• Application Number:
  US13/602,145
• Time in Patent Office: 556 Days
• Field of Search: 257 2- 15, 257/17, 257/18, 257/22, 257/96, 257/97, 257/101, 257/102, 257/103, 257/190, 257/196, 257/200, 257/20, 257/201, 257E33005-E33043, 438/36, 438/45, 438/46, 438/47
• US Class Current: 257/101
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/325 characterised by the doping materials

Abstract

A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the LED. The first relatively-highly silicon-doped region is a sublayer of the N-type layer of the LED. The first relatively-highly silicon-doped region is also separated from the remainder of the N-type layer by an intervening sublayer that is only lightly doped with silicon. The silicon doping profile promotes current spreading and high output power (lumens/watt). The LED has a low reverse leakage current and a high ESD breakdown voltage. The strain release layer has a concentration of indium that is between 5×10¹⁹ atoms/cm³ and 5×10²° atoms/cm³, and the first and second relatively-highly silicon-doped regions have silicon concentrations that exceed 1×10¹⁸ atoms/cm³.

Claims

1. An apparatus comprising:

a substrate of silicon;

a buffer layer adjacent to the substrate;

an N-type layer adjacent to the buffer layer, wherein the N-type layer includes a first sublayer that has a first silicon dopant concentration;

a strain release layer with a first portion and a second portion, wherein the first portion is adjacent to the first sublayer of the N-type layer, and wherein the strain release layer has a second silicon dopant concentration; and

a multiple quantum well active layer with a sublayer, wherein the sublayer of the multiple quantum well active layer is adjacent to the second portion of the strain release layer, wherein the sublayer of the multiple quantum well active layer has a third silicon dopant concentration, wherein both the first silicon dopant concentration and the third silicon dopant concentration are higher than the second silicon dopant concentration,

wherein the N-type layer further includes a second sublayer that has a fourth silicon dopant concentration and a third sublayer that is formed between the buffer layer and the second sublayer and has a fifth silicon dopant concentration, wherein the second sublayer is formed between the first sublayer and the third sublayer, and the fourth silicon dopant concentration is lower than the first silicon dopant concentration and the fifth silicon dopant concentration.

2. The apparatus of claim 1, wherein the first sublayer of the N-type layer and the sublayer of the multiple quantum well active layer are less than forty nanometers thick.

3. The apparatus of claim 1, wherein each of the first silicon dopant concentration and the third silicon dopant concentration exceeds 1×

10¹⁸ atoms/cm³.

4. The apparatus of claim 1, wherein the second silicon dopant concentration is less than 5×

10¹⁶ atoms/cm³.

5. The apparatus of claim 1, wherein the strain release layer has a concentration of indium that is between 5×

10¹⁹ atoms/cm³ and 5×

10²⁰ atoms/cm³.

6. The apparatus of claim 1, wherein the strain release layer is more than one hundred nanometers thick.

7. The apparatus of claim 1, wherein the N-type layer comprises gallium nitride (GaN).

8. The apparatus of claim 1, wherein the strain release layer comprises indium gallium nitride (InGaN).

9. The apparatus of claim 1, wherein the sublayer of the multiple quantum well active layer includes a barrier layer.

10. The LED device of claim of claim 1, further comprising an n-electrode disposed on a surface of the N-type layer, a bottom of the third sublayer of the N-type layer being above the surface of the N-type layer on which the n-electrode is disposed.

11. A light emitting diode (LED) device comprising:

a P-type layer;

a multiple quantum well active layer including a first sublayer and a second sublayer, the first sublayer having a first silicon concentration, the second sublayer having a second silicon concentration lower than the first silicon concentration;

a strain release layer comprising a plurality of periods, wherein each period comprises a first layer of indium gallium nitride and a second layer of indium gallium nitride, the first layer of indium gallium nitride having a first indium concentration, the second layer of indium gallium nitride having a second indium concentration different than the first indium concentration, the strain release layer having a third silicon concentration; and

an N-type layer having a first sublayer, a second sublayer, and a third sublayer, the second sublayer disposed between the first sublayer and the third sublayer, the third sublayer formed adjacent to the strain release layer and having a fourth silicon concentration, the third sublayer disposed between the strain release layer and the second sublayer, the multiple quantum well active layer is disposed between the P-type layer and the strain release layer,

wherein the first sublayer of the multiple quantum well active layer is formed adjacent to the strain release layer, and the third silicon concentration is lower than the first silicon concentration and the fourth silicon concentration, and

wherein the first silicon concentration is higher than a silicon concentration of the remaining layers of the multiple quantum well active layer other than the first sublayer thereof.

12. The LED device of claim 11, wherein the first sublayer of the multiple quantum well active layer is a portion of the multiple quantum well active layer adjoining the strain release layer.

13. The LED device of claim 11, wherein the third sublayer of the N-type layer is a portion of the N-type layer adjoining the strain release layer.

14. The LED device of claim 11, wherein the first silicon concentration is higher than 1×

10¹⁸ atoms/cm³, the second silicon concentration is lower than 1×

10¹⁸ atoms/cm³, the third silicon concentration is lower than 5×

10¹⁶ atoms/cm³.

15. The LED device of claim 11, wherein the second sublayer of the N-type layer is more than fifty nanometers thick, and the first sublayer of the multiple quantum well active layer is less than fifty nanometers thick.

16. The LED device of claim 11, wherein the first layer of each period of the strain release layer is less than five nanometers thick, and wherein the second layer of each period of the strain release layer is less than five nanometers thick.

17. The LED device of claim 11, wherein the first sublayer of the multiple quantum well active layer includes a barrier layer.

18. The LED device of claim of claim 11, wherein the first layer of indium gallium nitride is formed with the first indium concentration of 0-2×

10²⁰ atoms/ccm, and the second layer of indium gallium nitride is formed with the second indium concentration of 0-2×

10²⁰ atoms/ccm.

19. The LED device of claim of claim 11, further comprising an n-electrode disposed on a surface of the N-type layer, a bottom of the first sublayer of the N-type layer being above the surface of the N-type layer on which the n-electrode is disposed.

20. A light emitting diode (LED) device comprising:

a P-type layer;

a multiple quantum well active layer including a first sublayer and a second sublayer, the first sublayer having a first silicon concentration, the second sublayer having a second silicon concentration lower than the first silicon concentration;

a strain release layer comprising a plurality of periods, wherein each period comprises a first layer of indium gallium nitride and a second layer of indium gallium nitride, the first layer of indium gallium nitride having a first indium concentration, the second layer of indium gallium nitride having a second indium concentration different than the first indium concentration, the strain release layer having a third silicon concentration; and

an N-type layer having a first sublayer, a second sublayer, and a third sublayer, the second sublayer disposed between the first sublayer and the third sublayer, the third sublayer formed adjacent to the strain release layer and having a fourth silicon concentration, the third sublayer disposed between the strain release layer and the second sublayer, the multiple quantum well active layer is disposed between the P-type layer and the strain release layer,

wherein the first sublayer of the multiple quantum well active layer is formed adjacent to the strain release layer, and the third silicon concentration is lower than the first silicon concentration and the fourth silicon concentration, and

wherein the strain release layer further comprises a portion having a fifth silicon concentration higher than the third silicon concentration, and the fifth silicon concentration is lower than the first silicon concentration.

21. The LED device of claim 20, wherein the first sublayer of the multiple quantum well active layer is a portion of the multiple quantum well active layer adjoining the strain release layer.

22. The LED device of claim 20, wherein the third sublayer of the N-type layer is a portion of the N-type layer adjoining the strain release layer.

23. The LED device of claim 20, wherein the first silicon concentration is higher than 1×

10¹⁸ atoms/cm³, the second silicon concentration is lower than 1×

10¹⁸ atoms/cm³, the third silicon concentration is lower than 5×

10¹⁶ atoms/cm³.

24. The LED device of claim 20, wherein the second sublayer of the N-type layer is more than fifty nanometers thick, and the first sublayer of the multiple quantum well active layer is less than fifty nanometers thick.

25. The LED device of claim 20, wherein the first layer of each period of the strain release layer is less than five nanometers thick, and wherein the second layer of each period of the strain release layer is less than five nanometers thick.

26. The LED device of claim 20, wherein the first sublayer of the multiple quantum well active layer includes a barrier layer.

27. The LED device of claim of claim 20, wherein the first layer of indium gallium nitride is formed with the first indium concentration of 0-2×

10²⁰ atoms/ccm, and the second layer of indium gallium nitride is formed with the second indium concentration of 0-2×

10²⁰ atoms/ccm.

28. The LED device of claim of claim 20, further comprising an n-electrode disposed on a surface of the N-type layer, a bottom of the first sublayer of the N-type layer being above the surface of the N-type layer on which the n-electrode is disposed.