Vertical topology light emitting device

• US 8,669,587 B2
• Filed: 07/03/2013
• Issued: 03/11/2014
• Est. Priority Date: 04/09/2002
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Yoo, Myung Cheol
• Primary Examiner(s): SMITH, BRADLEY
• Application Number:
  US13/934,852
• Publication Number:
  US 20130299779A1
• Time in Patent Office: 251 Days
• Field of Search: 257/79, 257/103
• US Class Current: 257/103
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/641 characterized by the materials
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A vertical topology light emitting device comprises a support structure, a first adhesion layer, a second adhesion layer, a first metal layer, a second metal layer comprising a portion which directly contacts a GaN-based semiconductor structure, an interface layer, and a contact pad.

Claims

1. A light emitting device, comprising:

a support structure;

a first adhesion layer disposed on the support structure, the first adhesion layer comprising Au;

a second adhesion layer disposed on the first adhesion layer;

a first metal layer disposed on the second adhesion layer;

a second metal layer disposed on the first metal layer, the second metal layer comprising Ti;

a GaN-based semiconductor structure disposed on the second metal layer;

an interface layer disposed on the GaN-based semiconductor structure; and

a contact pad disposed on the interface layer,

wherein the second metal layer comprises a portion which directly contacts the GaN-based semiconductor structure.

2. The device according to claim 1, wherein the support structure comprises Cu.

3. The device according to claim 1, wherein the first adhesion layer directly contacts the second adhesion layer.

4. The device according to claim 1, wherein the first adhesion layer is thicker than the second adhesion layer.

5. The device according to claim 1, wherein the first metal layer directly contacts the second metal layer.

6. The device according to claim 1, wherein the first metal layer is thicker than the second metal layer.

7. The device according to claim 1, wherein the GaN-based semiconductor structure comprises an active layer having multiple quantum well structure, and wherein the active layer comprises AlInGaN.

8. The device according to claim 1, wherein the GaN-based semiconductor structure comprises an etched n-type GaN.

9. The device according to claim 1, wherein the GaN-based semiconductor structure is less than 5 microns thick.

10. The device according to claim 1, wherein the interface layer comprises Ti.

11. The device according to claim 1, wherein the interface layer comprises a first interface layer and a second interface layer.

12. The device according to claim 1, wherein the contact pad has a diameter of about 100 microns.

13. The device according to claim 1, further comprising a metal contact which contacts a p-type layer of the GaN-based semiconductor structure.

14. The device according to claim 1, wherein the portion of the second metal layer directly contacts a p-type layer of the GaN-based semiconductor structure.

15. A light emitting device, comprising:

a support structure;

an adhesion structure disposed on the support structure;

a first metal layer disposed on the adhesion structure;

a second metal layer disposed on the first metal layer, the second metal layer comprising Ti; and

a GaN-based semiconductor structure disposed on the adhesion structure,

wherein the second metal layer comprises a portion which directly contacts the GaN-based semiconductor structure, and

wherein the second metal layer serves as an n-type electrode to the GaN-based semiconductor structure.

16. The device according to claim 15, wherein the support structure comprises Cu.

17. The device according to claim 15, wherein the adhesion structure comprises Au.

18. The device according to claim 15, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer.

19. The device according to claim 15, wherein the first metal layer comprises Al.

20. The device according to claim 15, further comprising a metal contact which contacts a p-type layer of the GaN-based semiconductor structure.