Method for temperature compensation in MEMS resonators with isolated regions of distinct material

• US 8,669,831 B2
• Filed: 11/19/2010
• Issued: 03/11/2014
• Est. Priority Date: 03/09/2007
• Status: Active Grant

• Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation (Semiconductor Manufacturing International Corporation)
• Original Assignee: Silicon Laboratories Incorporated
• Inventors: Quevy, Emmanuel P., Bernstein, David H.
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US12/950,519
• Publication Number:
  US 20110084781A1
• Time in Patent Office: 1,208 Days
• Field of Search: 333186-189, 333/197, 333/199, 333/200, 310/370
• US Class Current: 333/186
• CPC Class Codes: B81C 1/00349 Creating layers of material on a substrate
• CPC Class Codes: B81C 1/00523 Etching material
• CPC Class Codes: B81C 1/0069 Thermal properties, e.g. improve thermal insulation
• CPC Class Codes: G02B 6/358 Latching of the moving element, i.e. maintaining or holding the moving element in place once operation has been performed; includes a mechanically bistable system
• CPC Class Codes: H03H 2009/02496 Horizontal, i.e. parallel to the substrate plane
• CPC Class Codes: H03H 2009/2442 Square resonators
• CPC Class Codes: H03H 3/0076 for obtaining desired frequency or temperature coefficients
• CPC Class Codes: H03H 9/2405 of microelectro-mechanical resonators
• CPC Class Codes: H03H 9/2457 Clamped-free beam resonators
• CPC Class Codes: Y10T 29/42 Piezoelectric device making
• CPC Class Codes: Y10T 29/49005 Acoustic transducer
• CPC Class Codes: Y10T 29/49165 by forming conductive walled aperture in base

Abstract

MEMS resonators containing a first material and a second material to tailor the resonator'"'"'s temperature coefficient of frequency (TCF). The first material has a different Young'"'"'s modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young'"'"'s modulus temperature coefficient and the second material has a positive Young'"'"'s modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.

Claims

1. A microelectromechanical system (MEMS) resonator device, comprising:

at least one resonating member that includes a first material having one or more trenches defined therein, each of the trenches being at least partially filled with a second material that acts to modify the thermal coefficient of frequency (TCF) of the resonator device;

where the resonating member has a top surface, a bottom surface, and one or more sidewalls;

where each of the trenches extends through the first material from the top surface to the bottom surface of the resonator;

where each of the trenches is isolated by the first material from the sidewalls of the resonator such that no second material filling each trench is present at the sidewalls of the resonator; and

wherein the second material has a Young'"'"'s modulus temperature coefficient that is different from the Young'"'"'s modulus temperature coefficient of the first material.

2. The device of claim 1, wherein the first material has a negative Young'"'"'s modulus temperature coefficient;

wherein the second material has a positive Young'"'"'s modulus temperature coefficient; and

wherein the second material acts to lower the thermal coefficient of frequency (TCF) of the resonator device.

3. The device of claim 1, wherein the one or more trenches are located in one or more regions of the resonating member that include a point of maximum stress within the resonating member during operation of the resonator device.

4. The device of claim 1, wherein the one or more trenches are located in one or more regions of the resonating member that include a point of minimum displacement within the resonating member during operation of the resonator device.

5. The device of claim 1, wherein each of the one or more trenches is defined to extend entirely through the first material such that the second material filling each trench extends between top surface and the bottom surface of the resonator.

6. The device of claim 1, wherein the one or more trenches comprise a plurality of spaced trenches defined in the first material.

7. The device of claim 1, wherein the one or more trenches comprise a plurality of trenches located in a plurality of spaced regions of the resonating member.

8. The device of claim 1, wherein each of the one or more trenches is defined with a dimension required to compensate the TCF of the resonator device.

9. The device of claim 1, wherein at least a portion of the at least one resonating member resonates via a flexural mode.

10. The device of claim 9, wherein the resonating member comprises at least one cantilevered beam that is anchored at a first end;

and wherein the one or more trenches are located in one or more regions of the resonating member proximate to the anchored first end.

11. The device of claim 1, wherein the resonating member comprises one of a cantilevered beam that is anchored at a first end, a beam anchored at two ends, a plate resonator, a ring resonator, or a disk resonator.

12. The device of claim 1, wherein the resonating member comprises a beam anchored at two ends.

13. The device of claim 1, wherein the resonating member comprises a plate resonator, disk resonator or ring resonator;

and wherein the one or more trenches are arranged as a radial array defined in the resonating member.

14. The device of claim 1, wherein at least some of the sides of the at least one resonating member extend during resonation.

15. The device of claim 1, wherein each of the one or more trenches is completely filled with the second material.

16. The device of claim 1, further comprising at least one layer above or below the first material that encapsulates the second material.

17. The device of claim 1, wherein the second material comprises silicon dioxide.

18. The device of claim 17, wherein the first material comprises at least one of silicon, germanium, or a silicon/germanium alloy.

19. The device of claim 1, where the one or more sidewalls includes opposite sidewalls;

and where each of the trenches is isolated by the first material from each of the opposite sidewalls of the resonator such that no second material is present at either of the opposite sidewalls of the resonator.

20. The device of claim 1, where the resonator is connected to a substrate;

where the top surface of the resonator is a surface of the resonator disposed opposite the substrate;

where the bottom surface is a surface of the resonator that faces the substrate; and

where each of the sidewalls of the resonator extends between the top surface and the bottom surface of the resonator.

21. The device of claim 20, where each of the sidewalls of the resonator is a surface of the resonator that is oriented substantially perpendicular to a plane of the substrate.

22. A microelectromechanical system (MEMS) resonator device, comprising:

at least one resonating member that includes a first material having one or more trenches defined therein, each of the trenches being at least partially filled with a second material that acts to modify the thermal coefficient of frequency (TCF) of the resonator device; and

wherein the second material has a Young'"'"'s modulus temperature coefficient that is different from the Young'"'"'s modulus temperature coefficient of the first material;

wherein the one or more trenches are located in one or more regions of the resonating member that include a point of maximum stress within the resonating member during operation of the resonator device; and

wherein the one or more regions are located on opposite sidewalls of the resonating member.

23. A microelectromechanical system (MEMS) resonator device, comprising:

at least one resonating member that includes a first material having one or more trenches defined therein, each of the trenches being at least partially filled with a second material that acts to modify the thermal coefficient of frequency (TCF) of the resonator device;

wherein the second material has a Young'"'"'s modulus temperature coefficient that is different from the Young'"'"'s modulus temperature coefficient of the first material; and

wherein each of the one or more trenches is defined to extend from a surface of the first material through only a portion of the first material to form a well having a bottom floor that comprises the first material.

24. A microelectromechanical system (MEMS) resonator device, comprising:

at least one resonating member that includes a first material having one or more trenches defined therein, each of the trenches being at least partially filled with a second material that acts to modify the thermal coefficient of frequency (TCF) of the resonator device;

wherein the second material has a Young'"'"'s modulus temperature coefficient that is different from the Young'"'"'s modulus temperature coefficient of the first material; and

wherein the resonating member comprises an elongated beam having a length; and

wherein each of the one or more trenches is defined in the first material as an elongated trench having a length oriented parallel to the length of the elongated beam.

25. A microelectromechanical system (MEMS) resonator device, comprising:

at least one resonating member that includes a first material having one or more trenches defined therein, each of the trenches being at least partially filled with a second material that acts to modify the thermal coefficient of frequency (TCF) of the resonator device; and

wherein the second material has a Young'"'"'s modulus temperature coefficient that is different from the Young'"'"'s modulus temperature coefficient of the first material;

wherein at least a portion of the at least one resonating member resonates via a flexural mode;

wherein the resonating member comprises at least one cantilevered beam that is anchored at a first end; and

wherein the one or more trenches are located in one or more regions of the resonating member on opposite sidewalls of the resonating member and proximate to the anchored first end.

26. The device of claim 25, wherein the resonating member comprises a tuning fork.

27. A microelectromechanical system (MEMS) resonator device, comprising:

at least one resonating member that includes a first material having one or more trenches defined therein, each of the trenches being at least partially filled with a second material that acts to modify the thermal coefficient of frequency (TCF) of the resonator device;

wherein the second material has a Young'"'"'s modulus temperature coefficient that is different from the Young'"'"'s modulus temperature coefficient of the first material; and

wherein each of the one or more trenches is only partially filled with the second material.

28. The device of claim 27, wherein the second material partially fills each of the one or more trenches to form an annular spacer structure of the second material along the inner edge of each trench.