Semiconductor member, semiconductor article manufacturing method, and LED array using the manufacturing method
First Claim
1. A method of manufacturing a semiconductor article comprising the steps of:
- preparing a first structure comprising a first semiconductor substrate, a compound semiconductor multilayer film, and an etching sacrificial layer provided between the first semiconductor substrate and the compound semiconductor multilayer film;
preparing a second structure comprising a second semiconductor substrate and an insulating layer;
bonding the first structure and the second structure;
forming a second groove intermittently in the second semiconductor substrate;
forming a third groove in the insulating layer through the second groove;
forming a first groove in the compound semiconductor multilayer film through the second and third grooves so as to expose the etching sacrificial layer; and
etching the etching sacrificial layer through the first, second, and third grooves so as to separate the first semiconductor substrate and transfer the compound semiconductor multilayer film to the second semiconductor substrate from the first semiconductor substrate.
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Abstract
A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.
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Citations
14 Claims
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1. A method of manufacturing a semiconductor article comprising the steps of:
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preparing a first structure comprising a first semiconductor substrate, a compound semiconductor multilayer film, and an etching sacrificial layer provided between the first semiconductor substrate and the compound semiconductor multilayer film; preparing a second structure comprising a second semiconductor substrate and an insulating layer; bonding the first structure and the second structure; forming a second groove intermittently in the second semiconductor substrate; forming a third groove in the insulating layer through the second groove; forming a first groove in the compound semiconductor multilayer film through the second and third grooves so as to expose the etching sacrificial layer; and etching the etching sacrificial layer through the first, second, and third grooves so as to separate the first semiconductor substrate and transfer the compound semiconductor multilayer film to the second semiconductor substrate from the first semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification
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- Resources
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsYonehara, Takao, Yamagata, Kenji, Sekiguchi, Yoshinobu, Nishi, Kojiro
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Primary Examiner(s)PHAM, HAI CHI
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Application NumberUS13/550,512Publication NumberTime in Patent Office603 DaysField of Search347/238, 438/34, 438/455, 438/456, 438458-460, 438/462, 438/465US Class Current347/238CPC Class CodesB41J 2/45 using light-emitting diode ...H01L 21/7806 involving the separation of...H01L 21/784 the substrate being a semic...H01L 27/153 in a repetitive configurati...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...H01L 33/0093 Wafer bonding; Removal of t...H01L 33/0095 Post-treatment of devices, ...
