Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)

• US 8,673,074 B2
• Filed: 07/15/2009
• Issued: 03/18/2014
• Est. Priority Date: 07/16/2008
• Status: Active Grant

• Current Assignee: Ostendo Technologies Inc.
• Original Assignee: Ostendo Technologies Inc.
• Inventors: Usikov, Alexander, Syrkin, Alexander, Brown, Robert G. W., El-Ghoroury, Hussein S., Spiberg, Philippe, Ivantsov, Vladimir, Kovalenkov, Oleg, Shapovalova, Lisa
• Primary Examiner(s): Gakh, Yelena G
• Application Number:
  US12/503,656
• Publication Number:
  US 20100012948A1
• Time in Patent Office: 1,707 Days
• Field of Search: None
• US Class Current: 117/101
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/2003 Nitride compounds

Abstract

A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.

Claims

1. A method of growing planar semi-polar Gallium-Nitride epitaxial film, comprising:

pretreating an m-sapphire substrate in an atmosphere of ammonia and argon, annealing the pretreated m-sapphire substrate in an atmosphere of ammonia and hydrogen chloride, growing an intermediate layer of aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) of a thickness below 100 nm and grown at V/III ratios of 6-15 or 15-25 and at a temperature in the range of 900°

C. to 1050°

C. on the annealed, pretreated m-sapphire substrate, and growing semi-polar{11-22} or {10-13} planar Gallium-Nitride on the intermediate layer, the intermediate layer and the semi-polar{11-22} or {10-13} plane Gallium-Nitride being grown using hydride vapor phase epitaxy (HVPE).