Method of forming continuous thin film and linear glass substrate with thin film
First Claim
1. A method of continuously forming a thin film comprising the steps of:
- moving a glass substrate with a thin continuous strip shape having a constant db/2(d+b), where d is a thickness thereof in a range from 30 μ
m to 300 μ
m and b is a width thereof in a cross section thereof, within a range from 0.015 to 0.15 through a film depositing region, in which a reaction gas is supplied and a temperature is controlled to be higher than 1,050°
C., in a suspended state in the reaction gas for a period of time between 0.1 second and 0.25 second, so that the glass substrate is heated, and the reaction gas is a mixed gas of H2 gas and DCS (SiH2Cl2, dichlorosilane) gas; and
moving continuously the glass substrate, immediately after the glass substrate passes through the film depositing region, to pass through a cooling region in which a temperature is lower than 900°
C. in a suspended state, so that the glass substrate is cooled and the thin film formed of a component of the reaction gas is formed on the glass substrate.
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Accused Products
Abstract
A method of continuously forming a thin film includes the step of: moving a glass substrate with a thin strip shape having a constant db/2(d+b), where d is a thickness thereof and b is a width thereof in a cross section thereof, within a range from 0.015 to 0.15 through a film depositing region in which a reaction gas is supplied and a temperature is controlled to be high so that the glass substrate is rapidly heated; and moving continuously the glass substrate, immediately after the film depositing region, to pass through a cooling region in which a temperature is lower than that of the film depositing region, so that the glass substrate is rapidly cooled and the thin film formed of a component of the reaction gas is formed on the glass substrate.
12 Citations
15 Claims
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1. A method of continuously forming a thin film comprising the steps of:
-
moving a glass substrate with a thin continuous strip shape having a constant db/2(d+b), where d is a thickness thereof in a range from 30 μ
m to 300 μ
m and b is a width thereof in a cross section thereof, within a range from 0.015 to 0.15 through a film depositing region, in which a reaction gas is supplied and a temperature is controlled to be higher than 1,050°
C., in a suspended state in the reaction gas for a period of time between 0.1 second and 0.25 second, so that the glass substrate is heated, and the reaction gas is a mixed gas of H2 gas and DCS (SiH2Cl2, dichlorosilane) gas; andmoving continuously the glass substrate, immediately after the glass substrate passes through the film depositing region, to pass through a cooling region in which a temperature is lower than 900°
C. in a suspended state, so that the glass substrate is cooled and the thin film formed of a component of the reaction gas is formed on the glass substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification