Out-of-plane spacer defined electrode
First Claim
1. A method of forming an out-of-plane electrode comprising:
- providing an oxide layer above an upper surface of a device layer;
providing a first cap layer portion above an upper surface of the oxide layer;
etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer;
depositing a first material portion within the first electrode perimeter defining trench;
depositing a second cap layer portion above the deposited first material portion;
vapor releasing a portion of the oxide layer;
depositing a third cap layer portion above the second cap layer portion after vapor releasing the portion of the oxide layer;
etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion;
depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define a perimeter of an out-of-plane electrode,etching an etch stop perimeter defining trench extending through the first cap layer portion and the oxide layer; and
depositing a third material portion within the etch stop perimeter defining trench, wherein vapor releasing a portion of the oxide layer comprises vapor releasing a portion of the oxide layer to a boundary defined by the third material portion.
1 Assignment
0 Petitions
Accused Products
Abstract
In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.
12 Citations
9 Claims
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1. A method of forming an out-of-plane electrode comprising:
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providing an oxide layer above an upper surface of a device layer; providing a first cap layer portion above an upper surface of the oxide layer; etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer; depositing a first material portion within the first electrode perimeter defining trench; depositing a second cap layer portion above the deposited first material portion; vapor releasing a portion of the oxide layer; depositing a third cap layer portion above the second cap layer portion after vapor releasing the portion of the oxide layer; etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion; depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define a perimeter of an out-of-plane electrode, etching an etch stop perimeter defining trench extending through the first cap layer portion and the oxide layer; and depositing a third material portion within the etch stop perimeter defining trench, wherein vapor releasing a portion of the oxide layer comprises vapor releasing a portion of the oxide layer to a boundary defined by the third material portion. - View Dependent Claims (2, 3, 4, 5)
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6. A method of forming an out-of-plane electrode comprising:
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providing an oxide layer above an upper surface of a device layer; epitaxially depositing a first cap layer portion above an upper surface of the oxide layer; etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer; depositing a first insulating material portion within the first electrode perimeter defining trench; epitaxially depositing a second cap layer portion above the deposited first material portion; performing an HF vapor etch release on a portion of the oxide layer; epitaxially depositing a third cap layer portion above the second cap layer portion after performing the HF vapor etch release; etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion; depositing a second insulating material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define a perimeter of an out-of-plane electrode; etching an etch stop perimeter defining trench extending through the first cap layer portion and the oxide layer; and depositing a third material portion within the etch stop perimeter defining trench, wherein performing an HF vapor etch release on a portion of the oxide layer comprises performing an HF vapor etch release to a boundary defined by the third material portion. - View Dependent Claims (7, 8, 9)
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Specification