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Methods of forming semiconductor structures

  • US 8,673,775 B2
  • Filed: 05/30/2013
  • Issued: 03/18/2014
  • Est. Priority Date: 06/15/2011
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, the method comprising:

  • forming a through-silicon-via (TSV) opening in a substrate;

    forming a dielectric layer continuously extending over the substrate and into the TSV opening;

    forming at least one conductive material over the dielectric layer and in the TSV opening;

    removing a portion of the at least one conductive material that is over the dielectric layer to form a TSV structure in the substrate;

    forming a metallic line in the dielectric layer, wherein an upper surface of the metallic line is level with an upper surface of the TSV structure; and

    removing a portion of the substrate, such that the TSV structure continuously extends through the substrate and the dielectric layer.

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