Nitride semiconductor light emitting device and fabrication method thereof
First Claim
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1. A light emitting device comprising:
- a first type semiconductor layer;
an active layer on the first type semiconductor layer; and
a second type semiconductor layer on the active layer,wherein the first type semiconductor layer comprises at least two semiconductor layers,wherein the second type semiconductor layer has a doping profile including a p-type dopant and comprising a plurality of peaks,wherein the second type semiconductor layer comprises a plurality of semiconductor layers,wherein the plurality of semiconductor layers comprises a first p-type semiconductor layer and a second p-type semiconductor layer,wherein the second p-type semiconductor layer includes GaN, andwherein the plurality of peaks are formed in the second p-type semiconductor layer.
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Abstract
Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
11 Citations
16 Claims
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1. A light emitting device comprising:
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a first type semiconductor layer; an active layer on the first type semiconductor layer; and a second type semiconductor layer on the active layer, wherein the first type semiconductor layer comprises at least two semiconductor layers, wherein the second type semiconductor layer has a doping profile including a p-type dopant and comprising a plurality of peaks, wherein the second type semiconductor layer comprises a plurality of semiconductor layers, wherein the plurality of semiconductor layers comprises a first p-type semiconductor layer and a second p-type semiconductor layer, wherein the second p-type semiconductor layer includes GaN, and wherein the plurality of peaks are formed in the second p-type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A light emitting device comprising:
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a first type semiconductor layer; an active layer on the first type semiconductor layer; and a second type semiconductor layer on the active layer, wherein the second type semiconductor layer includes a p-type dopant, wherein the second type semiconductor layer has a doping profile comprising a plurality of peaks, wherein the second type semiconductor layer comprises a plurality of semiconductor layers, wherein the plurality of semiconductor layers comprises a p-type GaN layer and a p-type AlGaN layer, and wherein the plurality of peaks are formed in the p-type GaN layer. - View Dependent Claims (10, 11, 12)
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13. A light emitting device comprising:
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a substrate; a buffer layer on the substrate; an n-type semiconductor layer on the buffer layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; and an electrode layer on the p-type semiconductor layer, wherein the p-type semiconductor layer includes a p-type dopant, wherein the p-type semiconductor layer has a doping profile comprising a plurality of peaks. wherein the p-type semiconductor layer comprises a plurality of semiconductor layers. wherein the plurality of semiconductor layers comprises a GaN layer and an AlGaN layer, wherein the n-type semiconductor layer includes a super lattice structure having at least two layers, and wherein the active layer has an InGaN layer, and wherein the p-type dopant of the GaN layer is more heavily doped than the p-type dopant of the AlGaN layer. - View Dependent Claims (14, 15, 16)
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Specification