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High-mobility multiple-gate transistor with improved on-to-off current ratio

  • US 8,674,341 B2
  • Filed: 12/16/2009
  • Issued: 03/18/2014
  • Est. Priority Date: 04/01/2009
  • Status: Active Grant
First Claim
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1. A multi-gate transistor comprising:

  • a substrate;

    a semiconductor fin over the substrate and comprising;

    a central fin formed of a first semiconductor material; and

    a semiconductor layer comprising a first portion and a second portion on opposite sidewalls of the central fin, wherein the semiconductor layer comprises a second semiconductor material different from the first semiconductor material;

    a gate electrode wrapping around sidewalls of the semiconductor fin; and

    a source region and a drain region on opposite ends of the semiconductor fin, wherein each of the central fin and the semiconductor layer extends from the source region to the drain region.

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