Solid state lighting device on a conductive substrate

• US 8,674,383 B2
• Filed: 01/21/2010
• Issued: 03/18/2014
• Est. Priority Date: 01/21/2010
• Status: Active Grant

• Current Assignee: Siphoton Incorporated
• Original Assignee: Siphoton Incorporated
• Inventors: Pan, Shaoher X.
• Primary Examiner(s): KUO, WENSING W
• Application Number:
  US12/691,269
• Publication Number:
  US 20110175055A1
• Time in Patent Office: 1,517 Days
• Field of Search: 257/14, 257/95, 257/E33.005, 257/E33.067
• US Class Current: 257/95
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface, and light emission layers disposed over the first protrusion surface. The light emission layers can emit light when an electric field is applied across the light emission layers.

Claims

1. A light emitting device, comprising:

a pyramid-shaped conductive substrate having a lower surface and a pyramid-shaped upper surface protruding from the lower surface with an angle between the lower surface and a side of the pyramid-shaped upper surface of about 125 degrees; and

light emission layers disposed over the pyramid-shaped upper surface, wherein the light emission layers are configured to emit light when an electric field is applied across the light emission layers, and wherein the light emissions layers over the pyramid-shaped upper surface are fully exposed to allow light emission to the outside.

2. The light emitting device of claim 1, wherein the conductive material includes a metallic material or a conducting polymer.

3. The light emitting device of claim 1, wherein the light emission layers comprises at least one quantum well formed by Group III-V compounds.

4. The light emitting device of claim 3, wherein the quantum well is formed by:

a first III-V nitride layer;

a quantum-well layer on the first III-V nitride layer; and

a second III-V nitride layer on the quantum well layer.

5. The light emitting device of claim 1, further comprising a reflective layer formed between the conductive substrate and the light emission layers.

6. The light emitting device of claim 5, wherein the reflective layer comprises aluminum.

7. The light emitting device of claim 1, further comprising a transparent conductive layer formed over the light emission layers, wherein the electric field across the light emission layers is produced by a voltage applied between the transparent conductive layer and the conductive substrate.

8. The light emitting device of claim 7, further comprising an electrode layer in electric connection with the transparent conductive layer.