Lateral devices containing permanent charge
First Claim
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1. A lateral semiconductor device comprising:
- a drift region between a body region and a drain region, said drift region having a first conductivity type;
a surface region on an upper surface of the drift region, said surface region having a second conductivity type;
an insulation region over the surface region; and
permanent charges embedded in the insulation region, wherein said permanent charges at least partly deplete the surface region.
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Abstract
A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.
3 Citations
11 Claims
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1. A lateral semiconductor device comprising:
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a drift region between a body region and a drain region, said drift region having a first conductivity type; a surface region on an upper surface of the drift region, said surface region having a second conductivity type; an insulation region over the surface region; and permanent charges embedded in the insulation region, wherein said permanent charges at least partly deplete the surface region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification