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Low harmonic RF switch in SOI

  • US 8,674,472 B2
  • Filed: 08/10/2010
  • Issued: 03/18/2014
  • Est. Priority Date: 08/10/2010
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor structure, comprising:

  • forming at least one trench through an insulator layer, wherein the at least one trench is adjacent a device formed in an active region on the insulator layer;

    forming a mask on and contacting the device;

    forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device, wherein the at least one cavity interrupts an interface between the substrate and the insulator layer directly beneath the device; and

    filling the at least one trench with a dielectric material without filling the at least one cavity with the dielectric material,wherein the forming the mask is performed before the forming the at least one cavity, and the mask protects the device during the forming the at least one cavity.

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