Package systems having a eutectic bonding material and manufacturing methods thereof

• US 8,674,495 B2
• Filed: 02/25/2011
• Issued: 03/18/2014
• Est. Priority Date: 10/08/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Shu, Chia-Pao, Cheng, Chun-Wen, Chang, Kuei-Sung, Huang, Hsin-Ting, Tsai, Shang-Ying, Peng, Jung-Huei
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US13/035,607
• Publication Number:
  US 20120086127A1
• Time in Patent Office: 1,117 Days
• Field of Search: 257/618, 257/625, 257/688, 257/782, 257/783, 257/E21.122, 257/E33.01
• US Class Current: 257/688
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03452 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/0362 Photolithography
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/05551 comprising apertures or cavities
• CPC Class Codes: H01L 2224/05555 being circular or elliptic
• CPC Class Codes: H01L 2224/05557 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/05617 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
• CPC Class Codes: H01L 2224/05638 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
• CPC Class Codes: H01L 2224/061 Disposition
• CPC Class Codes: H01L 2224/08145 the bodies being stacked
• CPC Class Codes: H01L 2224/08225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/26145 Flow barriers
• CPC Class Codes: H01L 2224/29011 comprising apertures or cavities
• CPC Class Codes: H01L 2224/29014 being circular or elliptic
• CPC Class Codes: H01L 2224/29017 : being non uniform along the layer connector
• CPC Class Codes: H01L 2224/2902 : Disposition
• CPC Class Codes: H01L 2224/291 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29101 : the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29117 : the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
• CPC Class Codes: H01L 2224/29124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29138 : the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
• CPC Class Codes: H01L 2224/29144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/29181 : Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/301 : Disposition
• CPC Class Codes: H01L 2224/32058 : being non uniform along the layer connector
• CPC Class Codes: H01L 2224/321 : Disposition
• CPC Class Codes: H01L 2224/32106 : the layer connector connecting one bonding area to at least two respective bonding areas
• CPC Class Codes: H01L 2224/32148 : the layer connector connecting to a bonding area protruding from the surface
• CPC Class Codes: H01L 2224/83203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/83365 : Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/83805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2225/06527 : Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/528 : Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/585 : comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/30 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01037 : Rubidium [Rb]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS

Abstract

A package system includes a first substrate. A second substrate is electrically coupled with the first substrate. At least one electrical bonding material is disposed between the first substrate and the second substrate. The at least one electrical bonding material includes a eutectic bonding material. The eutectic bonding material includes a metallic material and a semiconductor material. The metallic material is disposed adjacent to a surface of the first substrate. The metallic material includes a first pad and at least one first guard ring around the first pad.

Claims

1. A package system comprising:

a first substrate;

a second substrate electrically coupled with the first substrate; and

at least one electrical bonding material disposed between the first substrate and the second substrate, the at least one electrical bonding material including a eutectic bonding material, the eutectic bonding material including a metallic material and a semiconductor material, the metallic material being disposed adjacent to a surface of the first substrate, wherein the eutectic bonding material includes a first pad and at least one first guard ring around the first pad.

2. The package system of claim 1, wherein the first substrate includes at least one first opening and a first portion of the at least one electrical bonding material is at least partially filled in the at least one first opening.

3. The package system of claim 2, wherein the at least one first opening is between the first pad and the at least one first guard ring.

4. The package system of claim 2, wherein the at least one first opening is around the first pad and the at least one first guard ring.

5. The package system of claim 2, wherein the semiconductor material is disposed adjacent to a surface of the second substrate, the semiconductor material includes a second pad, and the second pad is electrically coupled with the first pad.

6. The package system of claim 5, wherein the semiconductor material further includes at least one second guard ring disposed around the second pad.

7. The package system of claim 6, wherein the second pad is spaced from the at least one second guard ring by a predetermined distance.

8. The package system of claim 6, wherein the second substrate comprises at least one second opening, and the at least one second opening is configured to accommodate at least a second portion of the at least one electrical bonding material.

9. The package system of claim 8, wherein the at least one second opening is around the second pad and the at least one second guard ring.

10. The package system of claim 8, wherein the at least one second opening is between the second pad and the at least one second guard ring.

11. The package system of claim 8, wherein the at least one first and second openings do not penetrate all the way through the second and first substrates, respectively.

12. The package system of claim 8, wherein the at least one second opening is misaligned from the at least one first opening.

13. A package system comprising:

a first substrate including at least one first opening;

a second substrate electrically coupled with the first substrate; and

at least one electrical bonding material disposed between the first substrate and the second substrate, the at least one electrical bonding material including a eutectic bonding material, the eutectic bonding material including a metallic material and a semiconductor material, wherein the metallic material is disposed adjacent to a surface of the first substrate, the metallic material includes a first pad, the eutectic bonding material includes at least one first guard ring around the first pad, the semiconductor material is disposed adjacent to a surface of the second substrate, the semiconductor material includes a second pad, and the second pad is electrically coupled with the first pad.

14. The package system of claim 13, wherein the at least one first opening is between the first pad and the at least one first guard ring.

15. The package system of claim 13, wherein the semiconductor material further includes at least one second guard ring disposed around the second pad.

16. The package system of claim 13, wherein the second substrate comprises at least one second opening, and the at least one second opening is configured to accommodate at least a second portion of the at least one electrical bonding material.

17. A package system comprising:

a first substrate comprising a first opening;

a second substrate electrically coupled with the first substrate, wherein the second substrate comprises a second opening; and

at least one electrical bonding material disposed between the first substrate and the second substrate, the at least one electrical bonding material including a eutectic bonding material, the eutectic bonding material including a metallic material and a semiconductor material, the eutectic bonding material extending into the first opening and the second opening.

18. The package system of claim 17, wherein the first substrate further comprises a third opening, wherein the first opening and the third opening are connected to each other at a location displaced from a top surface of the first substrate.

19. The package system of claim 17, wherein a depth of the first opening ranges from about 2 micrometers (μ

m) to about 10 μ

m and a width of the first opening ranges from about 1 μ

m to about 2 μ

m, and a depth of the second opening ranges from about 2 μ

m to about 10 μ

m and a width of the second opening ranges from about 1 μ

m to about 2 μ

m.

20. The package system of claim 17, wherein the metallic material comprises at least one of aluminum, copper, titanium, tantalum, gold, nickel or tin, and the semiconductor material comprises at least one of silicon or germanium.