Diode for a printable composition

• US 8,674,593 B2
• Filed: 08/31/2011
• Issued: 03/18/2014
• Est. Priority Date: 05/31/2007
• Status: Active Grant

• Current Assignee: NthDegree Technologies Worldwide Inc.
• Original Assignee: NthDegree Technologies Worldwide Inc.
• Inventors: Lowenthal, Mark D., Ray, William Johnstone, Shotton, Neil O., Blanchard, Richard A., Oraw, Brad
• Primary Examiner(s): Guharay, Karabi
• Application Number:
  US13/223,294
• Publication Number:
  US 20120161112A1
• Time in Patent Office: 930 Days
• Field of Search: 257/40, 257/98, 257/E51.024, 313/498
• US Class Current: 313/498
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24101 Connecting bonding areas at the same height
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/82138 the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83138 the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/83851 being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/95101 in a liquid medium
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13033 : TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
• CPC Class Codes: H01L 2924/13034 : Silicon Controlled Rectifier [SCR]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 31/022408 : for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/03044 : comprising a nitride compounds, e.g. GaN
• CPC Class Codes: H01L 31/035281 : Shape of the body
• CPC Class Codes: H01L 31/0475 : PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046
• CPC Class Codes: H01L 31/048 : Encapsulation of modules
• CPC Class Codes: H01L 31/0504 : specially adapted for series or parallel connection of solar cells in a module
• CPC Class Codes: H01L 31/1852 : comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: H01L 31/1856 : comprising nitride compounds, e.g. GaN
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/48 : characterised by the semiconductor body packages
• CPC Class Codes: H10K 50/80 : Constructional details
• CPC Class Codes: H10K 50/805 : Electrodes
• CPC Class Codes: H10K 59/90 : Assemblies of multiple devices comprising at least one organic light-emitting element
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy
• CPC Class Codes: Y02E 10/544 : Solar cells from Group III-V materials
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between about 2.5 to 7 microns; a first terminal coupled to the light emitting region on a first side, the first terminal having a height between about 1 to 6 microns; and a second terminal coupled to the light emitting region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns.

Claims

1. A diode comprising:

a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between about 2.5 to 7 microns;

a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height between about 1 to 6 microns; and

a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height between about 1to 6 microns.

2. The diode of claim 1, wherein the light emitting or absorbing region further comprises a mesa region having a height of about 0.5 to 2 microns.

3. The diode of claim 1, wherein the light emitting or absorbing region further comprises a metallic layer deposited before the first terminal and comprising nickel and gold alloyed to the mesa and coupled to the first terminal.

4. The diode of claim 3, wherein the nickel is deposited to be about 40 to 60 Angstroms in height and the gold is deposited to be about 40 to 60 Angstroms in height.

5. The diode of claim 1, wherein the diode further comprises a center via coupling the second terminal to the light emitting or absorbing region.

6. The diode of claim 5, wherein the center via is deposited before the first terminal and the second terminal and comprises via metal having a diameter between about 3 to 16 microns and comprising titanium and aluminum alloyed to an n+type portion of the mesa.

7. The diode of claim 6, wherein the titanium is deposited to be about 80 to 120 Angstroms in height and the aluminum is deposited to be about 0.5 to 5.0 microns in height.

8. The diode of claim 5, wherein the diode further comprises a nitride passivation coupled to the center via and having a thickness of between about 0.2 to 1 micron and a diameter between about 5 to 22 microns.

9. The diode of claim 1, wherein the first terminal is substantially hexagonal laterally.

10. The diode of claim 9, wherein each lateral side of the first terminal has a substantially sigmoidal curvature and terminates in a curved point.

11. The diode of claim 1, wherein the first terminal comprises die metal.

12. The diode of claim 11, wherein the first terminal comprises a first layer of nickel coupled to the light emitting or absorbing region, a second layer of aluminum, a third layer of nickel, and a fourth layer of gold.

13. The diode of claim 12, wherein the first layer of nickel is deposited to be about 80 to 120 Angstroms in height, the second layer of aluminum is deposited to be about 3.5 to 5.5 microns in height, the third layer of nickel is deposited to be about 0.2 to 1.0 microns in height, and the fourth layer of gold is deposited to be about 80 to 120 Angstroms in height.

14. The diode of claim 1, wherein the first terminal and the light emitting or absorbing region further comprise nitride passivation on lateral sides, the nitride passivation between about 0.2 to 1.0 microns thick.

15. The diode of claim 1, wherein lateral sides of the diode are formed during fabrication on a wafer as a perimeter trench about 0.5 to 5.0 microns deep between each diode on the wafer.

16. The diode of claim 1, wherein the second side of the light emitting or absorbing region is formed during fabrication by substrate removal from a second, back side of a wafer.

17. The diode of claim 1, wherein the second terminal comprises one or more metals and has an elliptical shape laterally with a major axis between about 10 to 20 microns in length and a minor axis between about 4 to 10 microns in width.

18. The diode of claim 1, wherein the second terminal comprises a first layer of titanium coupled to the light emitting or absorbing region or to a center via, a second layer of aluminum, a third layer of nickel, and a fourth layer of gold.

19. The diode of claim 18, wherein the first layer of titanium is deposited to be about 80 to 120 Angstroms in height, the second layer of aluminum is deposited to be about 3.5 to 5.5 microns in height, the third layer of nickel is deposited to be about 0.2 to 1.0 microns in height, and the fourth layer of gold is deposited to be about 80 to 120 Angstroms in height.

20. The diode of claim 1, wherein the light emitting or absorbing region is substantially hexagonal laterally and the diameter is measured opposing face-to-face.

21. The diode of claim 1, wherein the light emitting or absorbing region comprises gallium nitride (GaN).

22. The diode of claim 21, wherein the first terminal is in ohmic contact with p+GaN and the second terminal is in ohmic contact with n+GaN.

23. The diode of claim 21, wherein the first terminal is in ohmic contact with n+GaN and the second terminal is in ohmic contact with p+GaN.

24. The diode of claim 1, wherein the diode has a diameter between about 20 to 30 microns and a height between about 5 to 15 microns.

25. The diode of claim 1, wherein the diode has a diameter between about 10 to 50 microns and a height between about 5 to 25 microns.

26. The diode of claim 1, wherein the diode is substantially hexagonal laterally, has a diameter between about 10 to 50 microns measured opposing face-to face, and a height between about 5 to 25 microns.

27. The diode of claim 1, wherein the diode is substantially hexagonal laterally, has a diameter measured opposing face-to face between about 20 to 30 microns and a height between about 5 to 15 microns.

28. The diode of claim 1, wherein the diode has a width and length each between about 10 to 50 microns each and a height between about 5 to 25 microns.

29. The diode of claim 1, wherein the diode has a width and length each between about 20 to 30 microns each and a height between about 5 to 15 microns.

30. The diode of claim 1, wherein the light emitting or absorbing region of the diode is substantially hexagonal, square, triangular, rectangular, lobed, stellate, or toroidal.

31. The diode of claim 1, wherein the light emitting or absorbing region of the diode has a surface texture comprising a plurality of circular rings, or a plurality of substantially curvilinear trapezoids, or a plurality of parallel stripes, or a stellate pattern.

32. The diode of claim 1, wherein the diode is substantially hexagonal laterally and wherein each lateral side of the diode is less than about 10 microns in height.

33. The diode of claim 32, wherein each lateral side of the diode has a substantially sigmoidal curvature and terminates in a curved point.

34. The diode of claim 1, wherein the diode comprises at least one inorganic semiconductor selected from the group consisting of:

silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGASb.

35. The diode of claim 1, wherein the diode comprises at least one organic semiconductor selected from the group consisting of:

τ

-conjugated polymers, poly(acetylene)s, poly(pyrrole)s, poly(thiophene)s, polyanilines, polythiophenes, poly(p-phenylene sulfide), poly(para-phenylene vinylene)s (PPV) and PPV derivatives, poly(3-alkylthiophenes), polyindole, polypyrene, polycarbazole, polyazulene, polyazepine, poly(fluorene)s, polynaphthalene, polyaniline, polyaniline derivatives, polythiophene, polythiophene derivatives, polypyrrole, polypyrrole derivatives, polythianaphthene, polythianaphthane derivatives, polyparaphenylene, polyparaphenylene derivatives, polyacetylene, polyacetylene derivatives, polydiacethylene, polydiacetylene derivatives, polyparaphenylenevinylene, polyparaphenylenevinylene derivatives, polynaphthalene, polynaphthalene derivatives, polyisothianaphthene (PITN), polyheteroarylenvinylene (ParV) in which the heteroarylene group is thiophene, furan or pyrrol, polyphenylene-sulphide (PPS), polyperinaphthalene (PPN), polyphthalocyanine (PPhc), and their derivatives, copolymers thereof and mixtures thereof.

36. The diode of claim 1, wherein the diode further comprises at least one metal via structure extending between the first side of the light emitting or absorbing region to the second side of the light emitting or absorbing region.

37. The diode of claim 36, wherein the metal via structure comprises a central via, a peripheral via, or a perimeter via.

38. A diode comprising:

a light emitting or absorbing region having a diameter between about 6 and 30 microns and a height between about 1 to 7 microns;

a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height between about 1 to 6 microns; and

a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns;

wherein the diode is substantially hexagonal laterally, has a diameter between about 10 to 50 microns measured opposing face-to-face and a height between about 5 to 25 microns, and wherein each lateral side of the diode is less than about 10 microns in height, has a substantially sigmoidal curvature and terminates in a curved point.

39. The diode of claim 38, wherein the light emitting or absorbing region further comprises a mesa region having a height of about 0.5 to 2 microns.

40. The diode of claim 38, wherein the light emitting or absorbing region further comprises a metallic layer deposited before the first terminal and comprising nickel and gold alloyed to the mesa and coupled to the first terminal.

41. The diode of claim 38, wherein the diode further comprises a center via coupling the second terminal to the light emitting or absorbing region.

42. The diode of claim 41, wherein the center via comprises via metal having a diameter between about 3 to 16 microns, a height between about 0.5 to 5.0 microns, and comprising titanium and aluminum alloyed to an n+type portion of the mesa.

43. The diode of claim 42, wherein the diode further comprises a nitride passivation coupled to the center via and having a thickness of between about 0.2 to 1 micron and a diameter between about 5 to 22 microns.

44. The diode of claim 38, wherein the first terminal is substantially hexagonal laterally, and wherein each lateral side of the first terminal has a substantially sigmoidal curvature and terminates in a curved point.

45. The diode of claim 38, wherein the first terminal comprises die metal.

46. The diode of claim 45, wherein the first terminal comprises a first layer of nickel coupled to the light emitting or absorbing region, a second layer of aluminum, a third layer of nickel, and a fourth layer of gold.

47. The diode of claim 38, wherein the first terminal and the light emitting or absorbing region further comprise nitride passivation on lateral sides, the nitride passivation between about 0.2 to 1.0 microns thick.

48. The diode of claim 38, wherein the second terminal comprises one or more metals and has an elliptical shape laterally with a major axis between about 10 to 20 microns in length and a minor axis between about 4 to 10 microns in width.

49. The diode of claim 38, wherein the second terminal comprises a first layer of titanium coupled to the light emitting or absorbing region or to a center via, a second layer of aluminum, a third layer of nickel, and a fourth layer of gold.

50. The diode of claim 38, wherein the light emitting or absorbing region is substantially hexagonal laterally and the diameter is measured opposing face-to-face.

51. The diode of claim 38, wherein the diode has a diameter between about 20 to 30 microns and a height between about 5 to 15 microns.

52. The diode of claim 38, wherein the light emitting or absorbing region of the diode has a surface texture comprising a plurality of circular rings, or a plurality of substantially curvilinear trapezoids, or a plurality of parallel stripes, or a stellate pattern.

53. The diode of claim 38, wherein the diode comprises at least one inorganic semiconductor selected from the group consisting of:

silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGASb.

54. The diode of claim 38, wherein the diode comprises at least one organic semiconductor selected from the group consisting of:

τ

-conjugated polymers, poly(acetylene)s, poly(pyrrole)s, poly(thiophene)s, polyanilines, polythiophenes, poly(p-phenylene sulfide), poly(para-phenylene vinylene)s (PPV) and PPV derivatives, poly(3-alkylthiophenes), polyindole, polypyrene, polycarbazole, polyazulene, polyazepine, poly(fluorene)s, polynaphthalene, polyaniline, polyaniline derivatives, polythiophene, polythiophene derivatives, polypyrrole, polypyrrole derivatives, polythianaphthene, polythianaphthane derivatives, polyparaphenylene, polyparaphenylene derivatives, polyacetylene, polyacetylene derivatives, polydiacethylene, polydiacetylene derivatives, polyparaphenylenevinylene, polyparaphenylenevinylene derivatives, polynaphthalene, polynaphthalene derivatives, polyisothianaphthene (PITN), polyheteroarylenvinylene (ParV) in which the heteroarylene group is thiophene, furan or pyrrol, polyphenylene-sulphide (PPS), polyperinaphthalene (PPN), polyphthalocyanine (PPhc), and their derivatives, copolymers thereof and mixtures thereof.

55. A diode comprising:

a light emitting or absorbing region having a diameter between about 6 and 30 microns and a height between about 1 to 7 microns;

a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height between about 1 to 6 microns; and

a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns;

wherein the diode has a width and a length each between about 10 to 50 microns and a height between about 5 to 25 microns, and wherein each lateral side of the diode is less than about 10 microns in height, has a substantially sigmoidal curvature and terminates in a curvilinear point.

56. A diode comprising

a light emitting or absorbing region having a diameter between about 6and 30 microns and a height between about 2.5 to 7 microns;

a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height between about 3 to 6 microns; and

a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height between about 3 to 6 microns;

wherein the diode has a width and a length each between about 10 to 30 microns and a height between about 5 to 15 microns, and wherein each lateral side of the diode is less than about 10 microns in height, has a substantially sigmoidal curvature and terminates in a curvilinear point.