Vertically oriented semiconductor device and shielding structure thereof

• US 8,675,368 B2
• Filed: 08/18/2011
• Issued: 03/18/2014
• Est. Priority Date: 08/18/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Cho, Hsiu-Ying
• Primary Examiner(s): Tran, Long K
• Assistant Examiner(s): Tran, Dzung
• Application Number:
  US13/212,987
• Publication Number:
  US 20130044455A1
• Time in Patent Office: 943 Days
• Field of Search: 257/531, 438/765, 361/777
• US Class Current: 361/777
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present disclosure involves a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an electronic device positioned over the substrate. The electronic device includes an opening. The semiconductor device includes a shielding device positioned over the substrate and surrounding the electronic device. The shielding device includes a plurality of elongate members. A subset of the plurality of elongate members extend through the opening of the electronic device. At least one of the electronic device and the shielding device is formed in an interconnect structure positioned over the substrate.

Claims

1. A semiconductor device, comprising:

a substrate;

an electronic device positioned over the substrate, the electronic device including an opening; and

a shielding device positioned over the substrate and surrounding the electronic device, the shielding device including a plurality of elongate members, a subset of which extend through the opening of the electronic device;

wherein;

at least one of the electronic device and the shielding device is formed in an interconnect structure positioned over the substrate;

the interconnect structure includes a plurality of metal layers that each contain a plurality of metal lines;

the electronic device includes first and second components disposed in first and second metal layers, respectively, the first and second metal layers being vertically separated by the opening; and

the subset of the elongate members of the shielding device is disposed in a third metal layer between the first and second metal layers.

2. The semiconductor device of claim 1, wherein the opening of the electronic device is formed by a coil that has a winding orientation perpendicular to a surface of the substrate on which the interconnect structure is formed.

3. The semiconductor device of claim 2, wherein the coil extends in a direction perpendicular to a direction in which the elongate members of the shielding structure extend.

4. The semiconductor device of claim 1, wherein the elongate members extend parallel to one another.

5. The semiconductor device of claim 1, wherein the electronic device includes a transformer having a primary coil and a secondary coil that are each wound in a plane orthogonal to a surface of the substrate, the subset of the elongate members of the shielding device extending through the primary and secondary coils.

6. The semiconductor device of claim 5, wherein the primary coil and secondary coil have different coil widths.

7. The semiconductor device of claim 1, wherein the electronic device includes an inductor capacitor (LC) tank that contains a vertically wound inductor coil and an interdigitated capacitor.

8. A semiconductor device, comprising:

a substrate;

an electronic device disposed above the substrate, the electronic device including an elongate first component that extends in a first direction and an elongate second component that extends in a second direction, the second component being disposed above the first component; and

a shielding structure disposed over the substrate and shields the electronic device therein, the shielding structure including a plurality of strip lines that each extend in a direction non-parallel to the first and second directions;

wherein;

a first subset of strip lines are disposed below the first component of the electronic device;

a second subset of strip lines are disposed above the first component of the electronic device and below the second component of the electronic device; and

a third subset of strip lines are disposed above the second component of the electronic device.

9. The semiconductor device of claim 8, wherein:

the first and second directions are substantially the same; and

the strip lines of the shielding structure extend substantially perpendicularly with respect to the first and second directions.

10. The semiconductor device of claim 8, wherein the strip lines of the shielding structure are conductive.

11. The semiconductor device of claim 8, wherein the electronic device and the shielding structure are implemented in an interconnect structure disposed over the substrate, the interconnect structure containing a plurality of interconnect layers.

12. The semiconductor device of claim 11, wherein:

the plurality of interconnect layers include first, second, third, fourth, and fifth interconnect layers;

the first interconnect layer is located closest to the substrate among the first, second, third, fourth, and fifth interconnect layers, the first subset of strip lines being disposed in the first interconnect layer;

the second interconnect layer is located farther away from the substrate than the first interconnect layer, the first component of the electronic device being disposed in the second interconnect layer;

the third interconnect layer is located farther away from the substrate than the second interconnect layer, the second subset of strip lines being disposed in the third interconnect layer;

the fourth interconnect layer is located farther away from the substrate than the third interconnect layer, the second component of the electronic device being disposed in the fourth interconnect layer; and

the fifth interconnect layer is located farthest from the substrate among the first, second, third, fourth, and fifth interconnect layers, the third subset of strip lines being disposed in the fifth interconnect layer.

13. The semiconductor device of claim 8, wherein the electronic device includes a transformer that has a first coil and a second coil, the first and second coils each having a winding orientation that is orthogonal to a surface of the substrate over which the electronic device is disposed.

14. The semiconductor device of claim 8, wherein the electronic device includes an inductor capacitor (LC) tank, the LC tank including:

an inductor coil that is wound in a plane perpendicular to the surface of the substrate; and

a capacitor that includes interdigitated anode and cathode components.

15. A semiconductor device, comprising:

a substrate;

an interconnect structure disposed over the substrate, the interconnect structure including a plurality of interconnect layers that each contain a plurality of interconnect elements;

a winding coil that includes at least two interconnect elements that belong to different interconnect layers, wherein an opening is defined by the winding coil; and

a shielding structure disposed over the substrate, the shielding structure including a plurality of elongate members, wherein a first subset of the elongate members are disposed over an uppermost portion of the winding coil, wherein a second subset of the elongate members are disposed below a bottommost portion of the winding coil, and a third subset of the elongate members are disposed between the uppermost and bottommost portions of the winding coil and extend through the opening of the winding coil.

16. The semiconductor device of claim 15, wherein the winding coil is wound perpendicularly with respect to a planar surface of the substrate.

17. The semiconductor device of claim 15, wherein the winding coil is a part of a transformer device or a part of an inductor device.

18. The semiconductor device of claim 15, wherein the winding coil is a first winding coil, and wherein the semiconductor device further comprises a second winding coil that includes at least two further interconnect elements that belong to different interconnect layers, wherein a further opening is defined by the second winding coil, and wherein the third subset of the elongate members of the shielding structure extend through the further opening of the second winding coil.

19. The semiconductor device of claim 18, wherein the first winding coil and the second winding coil have different coil dimensions.

20. The semiconductor device of claim 15, wherein the interconnect elements of the winding coil extend in a first horizontal direction, and wherein the third subset of the elongate members of the shielding structure extend in a second horizontal direction that is perpendicular to the first horizontal direction.