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Vertically oriented semiconductor device and shielding structure thereof

  • US 8,675,368 B2
  • Filed: 08/18/2011
  • Issued: 03/18/2014
  • Est. Priority Date: 08/18/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    an electronic device positioned over the substrate, the electronic device including an opening; and

    a shielding device positioned over the substrate and surrounding the electronic device, the shielding device including a plurality of elongate members, a subset of which extend through the opening of the electronic device;

    wherein;

    at least one of the electronic device and the shielding device is formed in an interconnect structure positioned over the substrate;

    the interconnect structure includes a plurality of metal layers that each contain a plurality of metal lines;

    the electronic device includes first and second components disposed in first and second metal layers, respectively, the first and second metal layers being vertically separated by the opening; and

    the subset of the elongate members of the shielding device is disposed in a third metal layer between the first and second metal layers.

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