Arrays of ultrathin silicon solar microcells
First Claim
Patent Images
1. A method of making a solar cell, said method comprising the steps of:
- providing a solar cell substrate having a receiving surface; and
assembling a printable semiconductor element on said receiving surface of said substrate via contact printing;
wherein said printable semiconductor element comprises a semiconductor structure having a thickness that is less than or equal to 100 μ
m, and said semiconductor structure comprises low grade Si having a metallic purity level that is less than 99.999999%.
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Abstract
Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 μm and, for example, is made from low grade Si.
183 Citations
36 Claims
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1. A method of making a solar cell, said method comprising the steps of:
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providing a solar cell substrate having a receiving surface; and assembling a printable semiconductor element on said receiving surface of said substrate via contact printing;
wherein said printable semiconductor element comprises a semiconductor structure having a thickness that is less than or equal to 100 μ
m, and said semiconductor structure comprises low grade Si having a metallic purity level that is less than 99.999999%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 31, 32, 33, 34, 35, 36)
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21. A method of making an ultra-thin microscale solar cell, said method comprising:
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providing a solar cell substrate having a receiving surface; providing a plurality of semiconductor elements on a donor substrate; transferring at least a portion of said semiconductor elements from said donor substrate to said receiving surface; wherein said transferred semiconductor elements have a thickness that is less than 100 μ
m and comprise low grade Si having a metallic purity level that is less than 99.999999%. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification