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Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same

  • US 8,679,919 B2
  • Filed: 12/15/2011
  • Issued: 03/25/2014
  • Est. Priority Date: 12/15/2011
  • Status: Active Grant
First Claim
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1. A process of forming an electronic device comprising:

  • forming a semiconductor layer over a substrate, wherein the semiconductor layer has a primary surface and a thickness;

    patterning the semiconductor layer to define a first trench extending through at least approximately 50% of the thickness of the semiconductor layer;

    forming a first insulating layer within the first trench;

    forming a vertically-oriented doped region within the semiconductor layer and extending from near the primary surface towards the substrate, wherein the vertically-oriented doped region is formed after patterning the semiconductor layer to define the first trench;

    forming a first conductive structure within the first trench, wherein the first insulating layer is disposed between the semiconductor layer and the first conductive structure; and

    forming a gate electrode, wherein substantially all of the gate electrode overlies the primary surface of the semiconductor layer.

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