Progressive trimming method
First Claim
1. A method of reducing applied mechanical friction when trimming a bonded structure comprising a first wafer of predetermined thickness and comprising electrical components, bonded to a second wafer of predetermined thickness, with the first wafer having a chamfered edge, which method comprises:
- a first trimming step carried out by mechanical action upon the bonded structure and over a first depth comprising the thickness of the first wafer and a first portion of the thickness of the second wafer, and also being carried out over a first predetermined width from the edge of the first wafer; and
at least one second trimming step also carried out by mechanical action upon the bonded structure and over a second depth also comprising the thickness of the first wafer and a second portion of the thickness of the second wafer, while being carried out over a second predetermined width that is less than the first width and also is further from the edge of first wafer than is the first predetermined width.
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Accused Products
Abstract
The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.
64 Citations
17 Claims
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1. A method of reducing applied mechanical friction when trimming a bonded structure comprising a first wafer of predetermined thickness and comprising electrical components, bonded to a second wafer of predetermined thickness, with the first wafer having a chamfered edge, which method comprises:
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a first trimming step carried out by mechanical action upon the bonded structure and over a first depth comprising the thickness of the first wafer and a first portion of the thickness of the second wafer, and also being carried out over a first predetermined width from the edge of the first wafer; and at least one second trimming step also carried out by mechanical action upon the bonded structure and over a second depth also comprising the thickness of the first wafer and a second portion of the thickness of the second wafer, while being carried out over a second predetermined width that is less than the first width and also is further from the edge of first wafer than is the first predetermined width. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of producing a three-dimensional composite structure which comprises
at least one step of producing a first layer of electrical components on one face of a first wafer, with the first wafer having a predetermined thickness, a step of bonding the face of the first wafer comprising the layer of electrical components onto a second wafer to form a bonded structure, with the second wafer having a predetermined thickness, and a step of trimming the first wafer and a portion of the thickness of the second wafer, by performing a method which reduces mechanical friction applied thereto, the trimming step comprising: -
a first trimming sub-step carried out upon the bonded structure by mechanical action and over a first depth comprising the thickness of the first wafer and a first portion of the thickness of the second wafer, and also being carried out over a first predetermined width from an edge of the first wafer, and at least one second trimming sub-step also carried out upon the bonded structure by mechanical action and over a second depth also comprising the thickness of the first wafer and a second portion of the thickness of the second wafer, while being carried out over a second predetermined width that is less than the first width and also is further from the edge of first wafer than is the first predetermined width. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. In a method of trimming a layer of a bonded structure by mechanical machining, wherein the structure comprises a first wafer of predetermined thickness and comprising electrical components, bonded to a second wafer of predetermined thickness, the improvement which comprises:
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conducting a first mechanical machining of the first wafer of the bonded structure over a first predetermined depth comprising the thickness of the first wafer and a first portion of the thickness of the second wafer, and also being carried out over a first predetermined width from the edge of the first wafer; and conducting a second mechanical machining of the first wafer of the bonded structure over a second depth also comprising the thickness of the first wafer and a second portion of the thickness of the second wafer while being carried out over a second width that is less than the first width and also is further from the edge of first wafer than is the first predetermined width. - View Dependent Claims (17)
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Specification