Method for manufacturing display device
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first conductive film over a substrate;
forming a first insulating film over the first conductive film;
forming a semiconductor film over the first insulating film;
forming a second conductive film over the semiconductor film;
forming a mask film over the second conductive film;
forming a first resist mask over the mask film;
forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask;
removing the first resist mask using a resist stripper;
forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed;
forming a second insulating film over the first mask layer and the thin film stack body;
etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body;
forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the first mask layer and the sidewall insulating layer after etching the second insulating film;
forming a second resist mask over the first mask layer after forming the first electrode layer;
forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the second resist mask;
removing the second resist mask using a resist stripper after forming the second mask layer; and
forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after removing the second resist mask.
1 Assignment
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Accused Products
Abstract
Provided is a method for manufacturing a semiconductor device so as not expose a semiconductor layer to moisture and the number of masks is reduced. For example, a first conductive film, a first insulating film, a semiconductor film, a second conductive film, and a mask film are formed. The first mask film is processed to form a first mask layer. Dry etching is performed on the first insulating film, the semiconductor film, and the second conductive film with the use of the first mask layer to form a thin film stack body, so that a surface of the first conductive film is at least exposed. Sidewall insulating layers covering side surfaces of the thin film stack body are formed. The first conductive film is side-etched to form a first electrode. A second electrode layer is formed with the second mask layer.
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Citations
16 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; forming a semiconductor film over the first insulating film; forming a second conductive film over the semiconductor film; forming a mask film over the second conductive film; forming a first resist mask over the mask film; forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask; removing the first resist mask using a resist stripper; forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed; forming a second insulating film over the first mask layer and the thin film stack body; etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body; forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the first mask layer and the sidewall insulating layer after etching the second insulating film; forming a second resist mask over the first mask layer after forming the first electrode layer; forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the second resist mask; removing the second resist mask using a resist stripper after forming the second mask layer; and forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after removing the second resist mask. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; forming a semiconductor film over the first insulating film; forming a second conductive film over the semiconductor film; forming a mask film over the second conductive film; forming a first resist mask over the mask film; forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask; removing the first resist mask using a resist stripper; forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed; forming a second insulating film over the first mask layer and the thin film stack body; etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body; forming a second resist mask over the first mask layer after etching the second insulating film; forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the first mask layer and the sidewall insulating layer after forming the second resist mask; forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the first electrode layer; removing the second resist mask using a resist stripper after forming the second mask layer; and forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after removing the second resist mask. - View Dependent Claims (6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; forming a semiconductor film over the first insulating film; forming a second conductive film over the semiconductor film; forming a mask film over the second conductive film; forming a first resist mask over the mask film; forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask; removing the first resist mask using a resist stripper; forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed; forming a second insulating film over the first mask layer and the thin film stack body; etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body; forming a second resist mask over the first mask layer after etching the second insulating film; forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the second resist mask; forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the first mask layer and the sidewall insulating layer after forming the second mask layer; removing the second resist mask using a resist stripper after forming the first electrode layer; and forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after removing the second resist mask. - View Dependent Claims (10, 11, 12)
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13. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; forming a semiconductor film over the first insulating film; forming a second conductive film over the semiconductor film; forming a mask film over the second conductive film; forming a first resist mask over the mask film; forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask; removing the first resist mask using a resist stripper; forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed; forming a second insulating film over the first mask layer and the thin film stack body; etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body; forming a second resist mask over the first mask layer after etching the second insulating layer; forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the second resist mask; removing the second resist mask using a resist stripper after forming the second mask layer; forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the second mask layer and the sidewall insulating layer; and forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after forming the first electrode layer. - View Dependent Claims (14, 15, 16)
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Specification