Method for manufacturing display device

• US 8,679,986 B2
• Filed: 09/24/2011
• Issued: 03/25/2014
• Est. Priority Date: 10/14/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Mizoguchi, Takafumi, Shiraishi, Kojiro
• Primary Examiner(s): PARKER, ALLEN L
• Application Number:
  US13/244,387
• Publication Number:
  US 20120094433A1
• Time in Patent Office: 913 Days
• Field of Search: 438 39- 40, 438 42- 43
• US Class Current: 438/739
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided is a method for manufacturing a semiconductor device so as not expose a semiconductor layer to moisture and the number of masks is reduced. For example, a first conductive film, a first insulating film, a semiconductor film, a second conductive film, and a mask film are formed. The first mask film is processed to form a first mask layer. Dry etching is performed on the first insulating film, the semiconductor film, and the second conductive film with the use of the first mask layer to form a thin film stack body, so that a surface of the first conductive film is at least exposed. Sidewall insulating layers covering side surfaces of the thin film stack body are formed. The first conductive film is side-etched to form a first electrode. A second electrode layer is formed with the second mask layer.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive film over a substrate;

forming a first insulating film over the first conductive film;

forming a semiconductor film over the first insulating film;

forming a second conductive film over the semiconductor film;

forming a mask film over the second conductive film;

forming a first resist mask over the mask film;

forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask;

removing the first resist mask using a resist stripper;

forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed;

forming a second insulating film over the first mask layer and the thin film stack body;

etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body;

forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the first mask layer and the sidewall insulating layer after etching the second insulating film;

forming a second resist mask over the first mask layer after forming the first electrode layer;

forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the second resist mask;

removing the second resist mask using a resist stripper after forming the second mask layer; and

forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after removing the second resist mask.

2. The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of:

forming a pixel electrode layer over the second electrode layer,

wherein the pixel electrode layer is connected to the second electrode layer.

3. The method for manufacturing a semiconductor device according to claim 1 , further comprising the steps of:

forming a protective insulating film over the second electrode layer;

forming an opening portion in the protective insulating film so as to expose the second electrode layer; and

forming a pixel electrode layer over the protective insulating film and the opening portion in the protective insulating film,

wherein the pixel electrode layer is connected to the second electrode layer through the opening portion of the protective insulating film.

4. The method for manufacturing a semiconductor device according to claim 1,

wherein the semiconductor film is an In—

Ga—

Zn—

O-based oxide semiconductor film,

wherein the first conductive film and the second conductive film each is a titanium film, and

wherein the mask film is an aluminum oxide film.

5. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive film over a substrate;

forming a first insulating film over the first conductive film;

forming a semiconductor film over the first insulating film;

forming a second conductive film over the semiconductor film;

forming a mask film over the second conductive film;

forming a first resist mask over the mask film;

forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask;

removing the first resist mask using a resist stripper;

forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed;

forming a second insulating film over the first mask layer and the thin film stack body;

etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body;

forming a second resist mask over the first mask layer after etching the second insulating film;

forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the first mask layer and the sidewall insulating layer after forming the second resist mask;

forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the first electrode layer;

removing the second resist mask using a resist stripper after forming the second mask layer; and

forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after removing the second resist mask.

6. The method for manufacturing a semiconductor device according to claim 5, further comprising the steps of:

forming a pixel electrode layer over the second electrode layer,

wherein the pixel electrode layer is connected to the second electrode layer.

7. The method for manufacturing a semiconductor device according to claim 5, further comprising the steps of:

forming a protective insulating film over the second electrode layer;

forming an opening portion in the protective insulating film so as to expose the second electrode layer; and

forming a pixel electrode layer over the protective insulating film and the opening portion in the protective insulating film,

wherein the pixel electrode layer is connected to the second electrode layer through the opening portion of the protective insulating film.

8. The method for manufacturing a semiconductor device according to claim 5,

wherein the semiconductor film is an In—

Ga—

Zn—

O-based oxide semiconductor film,

wherein the first conductive film and the second conductive film each is a titanium film, and

wherein the mask film is an aluminum oxide film.

9. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive film over a substrate;

forming a first insulating film over the first conductive film;

forming a semiconductor film over the first insulating film;

forming a second conductive film over the semiconductor film;

forming a mask film over the second conductive film;

forming a first resist mask over the mask film;

forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask;

removing the first resist mask using a resist stripper;

forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed;

forming a second insulating film over the first mask layer and the thin film stack body;

etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body;

forming a second resist mask over the first mask layer after etching the second insulating film;

forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the second resist mask;

forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the first mask layer and the sidewall insulating layer after forming the second mask layer;

removing the second resist mask using a resist stripper after forming the first electrode layer; and

forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after removing the second resist mask.

10. The method for manufacturing a semiconductor device according to claim 9, further comprising the steps of:

forming a pixel electrode layer over the second electrode layer,

wherein the pixel electrode layer is connected to the second electrode layer.

11. The method for manufacturing a semiconductor device according to claim 9, further comprising the steps of:

forming a protective insulating film over the second electrode layer;

forming an opening portion in the protective insulating film so as to expose the second electrode layer; and

forming a pixel electrode layer over the protective insulating film and the opening portion in the protective insulating film,

wherein the pixel electrode layer is connected to the second electrode layer through the opening portion of the protective insulating film.

12. The method for manufacturing a semiconductor device according to claim 9,

wherein the semiconductor film is an In—

Ga—

Zn—

O-based oxide semiconductor film,

wherein the first conductive film and the second conductive film each is a titanium film, and

wherein the mask film is an aluminum oxide film.

13. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive film over a substrate;

forming a first insulating film over the first conductive film;

forming a semiconductor film over the first insulating film;

forming a second conductive film over the semiconductor film;

forming a mask film over the second conductive film;

forming a first resist mask over the mask film;

forming a first mask layer by performing dry etching or wet etching on the mask film with the first resist mask;

removing the first resist mask using a resist stripper;

forming a thin film stack body by performing dry etching on the first insulating film, the semiconductor film, and the second conductive film with the first mask layer, so that at least a surface of the first conductive film is exposed;

forming a second insulating film over the first mask layer and the thin film stack body;

etching the second insulating film to form a sidewall insulating layer covering a side surface of the thin film stack body;

forming a second resist mask over the first mask layer after etching the second insulating layer;

forming a second mask layer by performing dry etching or wet etching on the first mask layer with the second resist mask after forming the second resist mask;

removing the second resist mask using a resist stripper after forming the second mask layer;

forming a first electrode layer by performing wet etching or dry etching on a side portion of the first conductive film with the second mask layer and the sidewall insulating layer; and

forming a second electrode layer and a semiconductor layer by performing dry etching on an upper portion of the thin film stack body with the second mask layer and the sidewall insulating layer after forming the first electrode layer.

14. The method for manufacturing a semiconductor device according to claim 13, further comprising the steps of:

forming a pixel electrode layer over the second electrode layer,

wherein the pixel electrode layer is connected to the second electrode layer.

15. The method for manufacturing a semiconductor device according to claim 13, further comprising the steps of:

forming a protective insulating film over the second electrode layer;

forming an opening portion in the protective insulating film so as to expose the second electrode layer; and

forming a pixel electrode layer over the protective insulating film and the opening portion in the protective insulating film,

wherein the pixel electrode layer is connected to the second electrode layer through the opening portion of the protective insulating film.

16. The method for manufacturing a semiconductor device according to claim 13,

wherein the semiconductor film is an In—

Ga—

Zn—

O-based oxide semiconductor film,

wherein the first conductive film and the second conductive film each is a titanium film, and

wherein the mask film is an aluminum oxide film.