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Deposition of an amorphous carbon layer with high film density and high etch selectivity

  • US 8,679,987 B2
  • Filed: 05/10/2012
  • Issued: 03/25/2014
  • Est. Priority Date: 05/10/2012
  • Status: Active Grant
First Claim
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1. A method for processing a substrate, comprising:

  • introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system;

    generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200°

    C. and about 700°

    C. to form a low-hydrogen content amorphous carbon layer on the substrate;

    transferring the substrate into a curing chamber located within the processing system without breaking vacuum; and

    exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200°

    C.

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