Oxide semiconductor film and semiconductor device
First Claim
1. A semiconductor device comprising:
- a gate electrode;
an oxide semiconductor film comprising a first crystalline region and a second crystalline region; and
a gate insulating film between the gate electrode and the oxide semiconductor film,wherein each of the first crystalline region and the second crystalline region includes a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film,wherein the oxide semiconductor film is in a non-single-crystal state,wherein an a-axis direction of the first crystalline region is different from an a-axis direction of the second crystalline region, andwherein a b-axis direction of the first crystalline region is different from a b-axis direction of the second crystalline region.
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Abstract
An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
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Citations
36 Claims
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1. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film comprising a first crystalline region and a second crystalline region; and a gate insulating film between the gate electrode and the oxide semiconductor film, wherein each of the first crystalline region and the second crystalline region includes a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film, wherein the oxide semiconductor film is in a non-single-crystal state, wherein an a-axis direction of the first crystalline region is different from an a-axis direction of the second crystalline region, and wherein a b-axis direction of the first crystalline region is different from a b-axis direction of the second crystalline region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film comprising a first crystalline region and a second crystalline region; and a gate insulating film between the gate electrode and the oxide semiconductor film, wherein each of the first crystalline region and the second crystalline region includes a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film, wherein the oxide semiconductor film is in a non-single-crystal state, wherein an a-axis direction of the first crystalline region is different from an a-axis direction of the second crystalline region, wherein a b-axis direction of the first crystalline region is different from a b-axis direction of the second crystalline region, and wherein a concentration of hydrogen in the oxide semiconductor film is 5×
1019 atoms/cm3 or lower. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film comprising a first crystalline region and a second crystalline region; and a gate insulating film between the gate electrode and the oxide semiconductor film, wherein each of the first crystalline region and the second crystalline region includes a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film, wherein the oxide semiconductor film is in a non-single-crystal state, wherein an a-axis direction of the first crystalline region is different from an a-axis direction of the second crystalline region, wherein a b-axis direction of the first crystalline region is different from a b-axis direction of the second crystalline region, and wherein a spin density of a signal in a region where a g value is in the vicinity of 1.93 in ESR measurement of the oxide semiconductor film is lower than 1.3×
1018 spins/cm3. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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28. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film comprising a first crystalline region and a second crystalline region; and a gate insulating film between the gate electrode and the oxide semiconductor film, wherein each of the first crystalline region and the second crystalline region includes a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film, wherein the oxide semiconductor film is in a non-single-crystal state, wherein an a-axis direction of the first crystalline region is different from an a-axis direction of the second crystalline region, wherein a b-axis direction of the first crystalline region is different from a b-axis direction of the second crystalline region, and wherein a concentration of an alkali metal in the oxide semiconductor film is 5×
1016 atoms/cm3 or lower. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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Specification