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Light-emitting dies incorporating wavelength-conversion materials and related methods

  • US 8,680,558 B1
  • Filed: 09/30/2013
  • Issued: 03/25/2014
  • Est. Priority Date: 01/24/2012
  • Status: Active Grant
First Claim
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1. A composite wafer comprising:

  • a solid volume of a polymeric binder having a first surface and a second surface opposite the first surface;

    suspended within the polymeric binder, a plurality of semiconductor dies each (i) having a first face, a second face opposite the first face, and at least one sidewall spanning the first and second faces, and (ii) being a bare-die light-emitting element comprising a plurality of active semiconductor layers that cooperatively emit light;

    a reflecting layer disposed on a surface of the polymeric binder or disposed within at least a portion of the polymeric binder proximate at least one semiconductor die; and

    disposed on the first face of each semiconductor die, at least two spaced-apart contacts each having a free terminal end (i) at least a portion of which is not covered by the polymeric binder and (ii) available for electrical connection, the contacts each contacting a different active semiconductor layer of the semiconductor die,wherein (i) at least a portion of the polymeric binder is transparent to a wavelength of light emitted by at least one of the semiconductor dies, (ii) the polymeric binder contains therein a wavelength-conversion material for absorption of at least a portion of light emitted from at least one of the semiconductor dies and emission of converted light having a different wavelength, converted light and unconverted light emitted by at least one semiconductor die combining to form substantially white light having a correlated color temperature in the range of 2000 K to 10,000 K, (iii) a variation in color temperature of the white light emitted when each semiconductor die is individually energized is less than 500 K, and (iv) the reflecting layer has a reflectivity of at least 50% to a wavelength of light emitted by at least one semiconductor die or to a wavelength of light emitted by the wavelength-conversion material.

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