Semiconductor light emitting device and method for manufacturing same
First Claim
1. A semiconductor light emitting device, comprising:
- a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type;
a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode layer provided on a side of the second semiconductor layer opposite to the first semiconductor layer, the first electrode layer including a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, the metal portion contacting the second semiconductor layer, an equivalent circular diameter of a configuration of each of the plurality of opening portions as viewed along the direction being not less than 10 nanometers and not more than 5 micrometers; and
a second electrode layer electrically connected to the first semiconductor layer,the second semiconductor layer including a protruding portion contacting the metal portion and a recessed portion recessed from the protruding portion along the direction at a bottom portion of the opening portion, the recessed portions corresponding to the opening portions.
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Abstract
A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.
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Citations
10 Claims
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1. A semiconductor light emitting device, comprising:
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a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode layer provided on a side of the second semiconductor layer opposite to the first semiconductor layer, the first electrode layer including a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, the metal portion contacting the second semiconductor layer, an equivalent circular diameter of a configuration of each of the plurality of opening portions as viewed along the direction being not less than 10 nanometers and not more than 5 micrometers; and a second electrode layer electrically connected to the first semiconductor layer, the second semiconductor layer including a protruding portion contacting the metal portion and a recessed portion recessed from the protruding portion along the direction at a bottom portion of the opening portion, the recessed portions corresponding to the opening portions. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor light emitting device, comprising:
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a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type including a recessed portion and a protruding portion, the recessed portion being provided on a side of the second semiconductor layer opposite to the first semiconductor layer, the protruding portion protruding from the recessed portion along a direction from the first semiconductor layer toward the second semiconductor layer, an equivalent circular diameter of a configuration of the protruding portion as viewed from the direction being not less than 10 nanometers and not more than 5 micrometers; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode layer including a metal portion filled into the recessed portion, the metal portion not provided on the protruding portion; and a second electrode layer electrically connected to the first semiconductor layer. - View Dependent Claims (9, 10)
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Specification