Semiconductor light emitting device and method for manufacturing same

• US 8,680,561 B2
• Filed: 03/01/2011
• Issued: 03/25/2014
• Est. Priority Date: 09/06/2010
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kitagawa, Ryota, Asakawa, Koji, Tsutsumi, Eishi, Kamakura, Takanobu, Nunotani, Shinji, Fujimoto, Akira, Ogawa, Masaaki
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): CHIU, TSZ K
• Application Number:
  US13/037,914
• Publication Number:
  US 20120056222A1
• Time in Patent Office: 1,120 Days
• Field of Search: 257/95, 257/100, 257/103, 257/81, 257/98, 257/99, 257/E33.074
• US Class Current: 257/99
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.

Claims

1. A semiconductor light emitting device, comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type;

a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a first electrode layer provided on a side of the second semiconductor layer opposite to the first semiconductor layer, the first electrode layer including a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, the metal portion contacting the second semiconductor layer, an equivalent circular diameter of a configuration of each of the plurality of opening portions as viewed along the direction being not less than 10 nanometers and not more than 5 micrometers; and

a second electrode layer electrically connected to the first semiconductor layer,

the second semiconductor layer including a protruding portion contacting the metal portion and a recessed portion recessed from the protruding portion along the direction at a bottom portion of the opening portion, the recessed portions corresponding to the opening portions.

2. The device according to claim 1, wherein

Ad≦

×

(2/(n2+n0))

is satisfied, wherein

d is a distance between two adjacent opening portions of the plurality of opening portions,

Ad is an average of the distance d of the plurality of opening portions,

λ

is a wavelength of light emitted from the light emitting layer,

n2 is a refractive index of the second semiconductor layer with respect to the light, and

n0 is a refractive index with respect to the light of a medium outside the second semiconductor layer.

3. The device according to claim 1, wherein a difference between a thickness of the protruding portion along the direction and a thickness of the recessed portion along the direction is not more than a wavelength of light emitted from the light emitting layer.

4. The device according to claim 1, wherein a thickness of the metal portion along the direction is not less than 10 nanometers and not more than 50 nanometers.

5. The device according to claim 1, wherein the first electrode layer includes at least one selected from Ag, Au, Al, Zn, Zr, Si, Ge, Pt, Rh, Ni, Pd, Cu, Sn, C, Mg, Cr, Te, Se, and Ti.

6. The device according to claim 1, wherein the first electrode layer has an ohmic contact with the second semiconductor layer.

7. The device according to claim 1, wherein a sheet resistance of the first electrode layer is not more than 10 ohm/□

.

8. A semiconductor light emitting device, comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type including a recessed portion and a protruding portion, the recessed portion being provided on a side of the second semiconductor layer opposite to the first semiconductor layer, the protruding portion protruding from the recessed portion along a direction from the first semiconductor layer toward the second semiconductor layer, an equivalent circular diameter of a configuration of the protruding portion as viewed from the direction being not less than 10 nanometers and not more than 5 micrometers;

a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a first electrode layer including a metal portion filled into the recessed portion, the metal portion not provided on the protruding portion; and

a second electrode layer electrically connected to the first semiconductor layer.

9. The device according to claim 8, wherein

Ad≦

λ

×

(2/(n2+n0))

is satisfied, wherein

d is a distance between two adjacent opening portions of the plurality of opening portions,

Ad is an average of the distance d of the plurality of opening portions,

λ

is a wavelength of light emitted from the light emitting layer,

n2 is a refractive index of the second semiconductor layer with respect to the light, and

n0 is a refractive index with respect to the light of a medium outside the second semiconductor layer.

10. The device according to claim 8, wherein a difference between a thickness of the protruding portion along the direction and a thickness of the recessed portion along the direction is not more than a wavelength of light emitted from the light emitting layer.