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CMOS device and method of forming the same

  • US 8,680,576 B2
  • Filed: 05/16/2012
  • Issued: 03/25/2014
  • Est. Priority Date: 05/16/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate including a first region and a second region;

    a first buffer layer formed over the substrate and between first and second isolation features in the first region, the first and second isolation features being distinct from the substrate, the first buffer layer having a first width;

    a second buffer layer formed over the substrate and between third and fourth isolation features in the second region, the third and fourth isolation features being distinct from the substrate, the second buffer layer having a second width different from the first width of the first buffer layer;

    a first fin structure formed over the first buffer layer and between the first and second isolation features in the first region; and

    a second fin structure formed over the second buffer layer and between the third and fourth isolation features in the second region.

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