×

Trench gated power device with multiple trench width and its fabrication process

  • US 8,680,607 B2
  • Filed: 06/18/2012
  • Issued: 03/25/2014
  • Est. Priority Date: 06/20/2011
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a semiconductor mass;

    gate electrodes in first trenches in said semiconductor mass, and field plate electrodes in second trenches in said semiconductor mass;

    wherein said first trenches and said second trenches have substantially the same depth;

    wherein said first and said second trenches each have stepped sides having at least three distinct widths, wherein a top portion of each said trench is wider than a middle portion thereof which has substantially vertical sidewalls, and a bottom portion thereof is narrower than said middle portion;

    wherein said first and said second trenches are not identical;

    a first-conductivity-type source region, in said semiconductor mass, near said first trenches, and a second-conductivity-type body region adjacent said first trenches, and a second-conductivity-type body contact region surrounding said second trenches.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×