Stack-type image sensor
First Claim
Patent Images
1. An image sensor comprising:
- at least two light-sensing layers stacked on different layers, each of the at least two light-sensing layers including at least one resistance change element, an electrical resistance of the at least one resistance change element changing according to an amount of incident light; and
at least one filter layer, the at least one filter layer including a light absorption adjusting layer, whereinthe at least two light-sensing layers and the at least one filter layer are alternately disposed in a vertical direction, andthe light absorption adjusting layer includes a light absorption material having an absorption coefficient that varies according to a wavelength of light incident on the light absorption adjusting layer and a thickness of the light absorption adjusting layer.
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Abstract
Example embodiments are directed to a stack-type image sensor including resistance change elements. The stack-type image sensor includes at least two light-sensing layers that detect different color light stacked on different layers. The stack-type image sensor may not require a size of a unit pixel that detects a light color to be less than 1 μm in order to generate a high resolution color image. As such, resolution saturation may be avoided.
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Citations
12 Claims
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1. An image sensor comprising:
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at least two light-sensing layers stacked on different layers, each of the at least two light-sensing layers including at least one resistance change element, an electrical resistance of the at least one resistance change element changing according to an amount of incident light; and at least one filter layer, the at least one filter layer including a light absorption adjusting layer, wherein the at least two light-sensing layers and the at least one filter layer are alternately disposed in a vertical direction, and the light absorption adjusting layer includes a light absorption material having an absorption coefficient that varies according to a wavelength of light incident on the light absorption adjusting layer and a thickness of the light absorption adjusting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An image sensor comprising:
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at least two light-sensing layers stacked on different layers, each of the at least two light-sensing layers including at least one resistance change element, an electrical resistance of the at least one resistance change element changing according to an amount of incident light; a substrate; a first filter layer; a second filter layer, each of the first and second filter layers including a light absorption adjusting layer, wherein the light absorption adjusting layer includes a light absorption material having an absorption coefficient that varies according to a wavelength of light incident on the light absorption adjusting layer and a thickness of the light absorption adjusting layer, the at least two light-sensing layers include a first light-sensing layer, a second light-sensing layer and a third light-sensing layer, and the first light-sensing layer, the first filter layer, the second light-sensing layer, the second filter layer, and the third light-sensing layer are sequentially stacked on the substrate; and at least one transparent insulating layer between the first light-sensing layer and the second light-sensing layer and between the second light-sensing layer and the third light-sensing layer. - View Dependent Claims (9)
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10. An image sensor comprising:
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at least two light-sensing layers stacked on different layers, each of the at least two light-sensing layers including at least one resistance change element, an electrical resistance of the at least one resistance change element changing according to an amount of incident light; at least one filter layer, the at least one filter layer including a light absorption adjusting layer, the at least two light-sensing layers and the at least one filter layer being alternately disposed in a vertical direction; and a substrate, wherein, the at least one filter layer includes a first filter layer and a second filter layer, the at least two light-sensing layers include a first light-sensing layer, a second light-sensing layer and a third light-sensing layer, the first light-sensing layer, the first filter layer, the second light-sensing layer, the second filter layer, and the third light-sensing layer are sequentially stacked on the substrate, and each of the first through third light-sensing layers includes, the resistance change element and a capacitor connected to each other in parallel, a reset transistor having a source connected to one end of the resistance change element and the capacitor, a source follower transistor having a gate connected to the one end of the resistance change element and the capacitor and a drain connected to a drain of the reset transistor, a select transistor having a drain connected to a source of the source follower transistor, and an output line connected to a source of the select transistor. - View Dependent Claims (11)
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12. An image sensor comprising:
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at least two light-sensing layers stacked on different layers, each of the at least two light-sensing layers including at least one resistance change element, a current flowing in each of the two light-sensing layers being changed according to an amount of incident light; and at least one filter layer, the at least one filter layer including a light absorption adjusting layer, wherein the at least two light-sensing layers and the at least one filter layer are alternately disposed in a vertical direction, and the light absorption adjusting layer including a light absorption material having an absorption coefficient that varies according to a wavelength of light incident on the light absorption adjusting layer and a thickness of the light absorption adjusting layer.
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Specification