Power amplifier including variable capacitor circuit

• US 8,680,928 B2
• Filed: 03/29/2012
• Issued: 03/25/2014
• Est. Priority Date: 03/29/2012
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Jeon, Moon Suk, Woo, Jung-Rin, Jung, Sang Hwa, Kwon, Young
• Primary Examiner(s): Nguyen, Khanh V
• Application Number:
  US13/433,957
• Publication Number:
  US 20130257545A1
• Time in Patent Office: 726 Days
• Field of Search: 330/277, 330/296, 330/311, 330/310
• US Class Current: 330/311
• CPC Class Codes: H03F 1/223 with MOSFET's
• CPC Class Codes: H03F 1/3205 in field-effect transistor amplifiers
• CPC Class Codes: H03F 2200/61 the cascode amplifier has more than one common gate stage
• CPC Class Codes: H03F 3/193 with field-effect devices H03F3/195 takes precedence

Abstract

A power amplifier includes first and second amplification stages. The first amplification stage is configured to amplify a radio frequency (RF) input signal. The second amplification stage includes at least one transistor configured to amplify an output of the first amplification stage, the second amplification stage being configured to have a capacitance between a gate of the at least one transistor and a first power supply voltage. The capacitance automatically varies with amplitude of the output of the first amplification stage.

Claims

1. A power amplifier, comprising:

a first amplification stage configured to amplify a radio frequency (RF) input signal; and

a second amplification stage comprising at least one transistor configured to amplify an output of the first amplification stage and at least one variable capacitor circuit, connected between a gate of the at least one transistor and a first power supply voltage, and configured to have a capacitance that varies in response to amplitude of the output of the first amplification stage to function as a linearizer for the power amplifier.

2. The power amplifier of claim 1, wherein each of the at least one variable capacitor circuit comprises:

a diode circuit including a first capacitor and a diode connected in series; and

a second capacitor connected in parallel to the diode circuit.

3. The power amplifier of claim 2, wherein the diode circuit further includes a resistor connected in parallel to the diode.

4. The power amplifier of claim 1, wherein the at least one transistor includes a first common-gate transistor and a second common-gate transistor connected in cascade to the first common-gate transistor,

wherein the at least one variable capacitor circuit includes a first variable capacitor circuit connected between the first power supply voltage and the first common-gate transistor and a second variable capacitor circuit connected between the first power supply voltage and the second common-gate transistor,

wherein the first variable capacitor circuit comprises:

a first diode circuit including a first capacitor and a first diode connected in series; and

a second capacitor connected in parallel to the first diode circuit, and

wherein the second variable capacitor circuit includes;

a second diode circuit including a third capacitor and a second diode connected in series, and

a fourth capacitor connected in parallel to the second diode circuit.

5. The power amplifier of claim 1, wherein an average capacitance of each of the at least one variable capacitor circuit increases in proportion to a duration during which the voltage swing of the gate of the one of the at least one transistor has a voltage higher than a threshold voltage.

6. The power amplifier of claim 1, wherein the at least one transistor comprises a complementary metal-oxide semiconductor field-effect transistor (CMOS FET).

7. The power amplifier of claim 1, wherein the at least one transistor comprises a common-gate transistor.

8. The power amplifier of claim 1, wherein the first amplification stage comprise a common-source transistor between the first power supply voltage and the second amplification stage, and

wherein the RF input signal is input to a gate of the common-source transistor.

9. The power amplifier of claim 8, wherein the common-source transistor comprise a CMOS FET.

10. A power amplifier, comprising:

a common-source transistor configured to receive an RF signal via a gate of the common-source transistor;

a first common-gate transistor connected in cascade to the common-source transistor; and

a first variable capacitor circuit connected between a gate of the first common-gate transistor and a ground voltage, a capacitance of the first variable capacitor circuit being controlled to vary, based on a voltage swing of the gate of the first common-gate transistor, to increase linearity of the power amplifier.

11. The power amplifier of claim 10, wherein the first variable capacitor circuit comprise:

a diode circuit including a first capacitor and at least one diode connected in series to the first capacitor; and

a second capacitor connected between the gate of the common-gate transistor and the ground voltage and in parallel to the diode circuit.

12. The power amplifier of claim 11, wherein the diode circuit includes a resistor connected in parallel to the at least one diode.

13. The power amplifier of claim 10, wherein an average capacitance of the first variable capacitor circuit increases in proportion to a duration during which the voltage swing of the gate of the first common-gate transistor has a voltage higher than a threshold voltage.

14. The power amplifier of claim 10, wherein each of the common-source transistor and the first common-gate transistor is a complementary metal-oxide semiconductor field-effect transistor (CMOS FET).

15. The power amplifier of claim 10, further comprising:

a second common-gate transistor connected in cascade to the first common-gate transistor; and

a second variable capacitor circuit connected between a gate of the second common-gate transistor and the ground voltage, a capacitance of the second variable capacitor circuit being controlled to vary based on a voltage swing of the gate of the second common-gate transistor, to increase the linearity of the power amplifier.

16. A power amplifier having a linearizer, comprising:

a first amplification stage comprising a common-source transistor configured to receive an RF signal via a gate of the first amplification stage; and

a second amplification stage comprising a common-gate transistor, connected in cascade to the first amplification stage, and a variable capacitor circuit, connected between the common-gate transistor and a first power supply voltage, the second amplification stage being configured to amplify an output of the first amplification stage,

wherein the variable capacitor circuit is configured to operate as the linearizer, and comprises;

a diode circuit including a first capacitor and a diode connected in series to the first capacitor; and

a second capacitor connected between a gate of the common-gate transistor and the ground voltage and in parallel to the diode circuit.

17. The power amplifier of claim 16, wherein the diode circuit further includes a resistor connected in parallel to the diode.

18. The power amplifier of claim 16, wherein the common-source transistor comprises a complementary metal-oxide semiconductor field-effect transistor (CMOS FET).