Systems and methods for generating soft information in NAND flash
First Claim
1. A method for generating soft information for a memory cell, the method comprising:
- measuring an output of the memory cell in response to applying a reference signal, wherein the reference signal includes a voltage value and position information;
identifying a bin of a plurality of bins based on the position information of the reference signal, wherein the plurality of bins represent a range of threshold voltages for the memory cell;
splitting the identified bin into at least two bins based on the output of the memory cell and the voltage value of the reference signal; and
assigning the identified bin, the plurality of bins, and the at least two bins respective indices.
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Accused Products
Abstract
Systems and methods are provided to generate soft information related to the threshold voltage of a memory cell. A range of threshold voltages for the memory cell is divided into subregions of threshold voltage values herein referred to as bins. An output of the memory cell in response to an applied reference signal is measured. The applied reference signal includes a voltage value and position information. A single bin is identified based on the position information of the reference signal. The identified bin is split into more than one bin based on the output of the memory cell and the voltage value of the reference signal. The newly split bins and all the other bins that were not split are assigned new bin indices.
9 Citations
20 Claims
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1. A method for generating soft information for a memory cell, the method comprising:
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measuring an output of the memory cell in response to applying a reference signal, wherein the reference signal includes a voltage value and position information; identifying a bin of a plurality of bins based on the position information of the reference signal, wherein the plurality of bins represent a range of threshold voltages for the memory cell; splitting the identified bin into at least two bins based on the output of the memory cell and the voltage value of the reference signal; and assigning the identified bin, the plurality of bins, and the at least two bins respective indices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A system for generating soft information for a memory cell, the system comprising:
control circuitry configured to; measure an output of the memory cell in response to applying a reference signal, wherein the reference signal includes a voltage value and position information; identify a bin of a plurality of bins based on the position information of the reference signal, wherein the plurality of bins represent a range of threshold voltages for the memory cell; split the identified bin into at least two bins based on the output of the memory cell and the voltage value of the reference signal; and assign the identified bin, the plurality of bins, and the at least two bins respective indices. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
Specification