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Method of forming a sapphire crystal using a melt fixture including thermal shields having a stepped configuration

  • US 8,685,161 B2
  • Filed: 02/14/2012
  • Issued: 04/01/2014
  • Est. Priority Date: 04/08/2004
  • Status: Active Grant
First Claim
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1. A method of forming a sapphire single crystal comprising:

  • providing a melt fixture comprising;

    a crucible;

    a die having a length, wherein the die is open to and extends along a length of the crucible; and

    a plurality of thermal shields overlying a crucible lid and adjacent to the die, wherein;

    each of the thermal shields has a length, a width, and a thickness, wherein length>

    width>

    thickness;

    the thermal shields include a lower thermal shield and an upper thermal shield;

    the lower thermal shield is disposed between the crucible lid and the upper thermal shield; and

    the upper thermal shield has a length that is shorter and extends along a smaller fraction of the length of the die than a length of the lower thermal shield, such that a combination of the lower and upper thermal shields defines a stepped configuration with respect to the length of the die;

    forming a melt in the crucible; and

    drawing an as-formed sapphire single crystal sheet from the die.

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