Semiconductor devices with connection patterns

• US 8,685,805 B2
• Filed: 08/11/2011
• Issued: 04/01/2014
• Est. Priority Date: 08/06/2004
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Oh, Chang-Woo
• Primary Examiner(s): Sofocleous, Alexander
• Assistant Examiner(s): Dulka, John P
• Application Number:
  US13/207,832
• Publication Number:
  US 20110300693A1
• Time in Patent Office: 964 Days
• Field of Search: 438/39, 438/164, 438/412, 438/479, 257/E21.377, 257/E29.185
• US Class Current: 438/164
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66833 with a charge trapping gate insulator, e.g. MNOS transistors
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a first isolation dielectric pattern on the semiconductor substrate, and an active pattern on the first isolation dielectric pattern. A semiconductor pattern is interposed between the semiconductor substrate and the first isolation dielectric pattern, and a second isolation dielectric pattern is interposed between the semiconductor substrate and the semiconductor pattern. The semiconductor substrate and the semiconductor pattern are electrically connected by a connection pattern.

Claims

1. A method for manufacturing a semiconductor device, the method comprising:

forming a stacked structure in which a sacrificial layer and an active layer are sequentially stacked on a semiconductor substrate;

removing the sacrificial layer to form an empty space between the active layer and the semiconductor substrate;

forming a first isolation dielectric pattern on the semiconductor substrate in the empty space;

forming a semiconductor pattern on the semiconductor substrate, the semiconductor pattern filling the empty space and being separated from the semiconductor substrate; and

forming a connection pattern that electrically connects the semiconductor pattern and the semiconductor substrate, wherein the connection pattern directly contacts a side surface of the semiconductor pattern and the semiconductor substrate at one side of the semiconductor pattern.

2. The method of claim 1, wherein the connection pattern includes a semiconductor material and/or a conductive material.

3. The method of claim 1, wherein the connection pattern and the semiconductor pattern include the same material.

4. The method of claim 1, further comprising forming a second isolation dielectric pattern on a bottom surface of the active layer in the empty space.

5. The method of claim 4, wherein the second isolation dielectric pattern includes the same insulating material as the first isolation dielectric pattern.

6. The method of claim 4, wherein the first isolation dielectric pattern and the second isolation dielectric pattern are formed at the same time.

7. The method of claim 1, wherein a channel region in the active layer comprises an undoped semiconductor material, and the semiconductor pattern comprises a doped semiconductor material.

8. The method of claim 1, wherein the connection pattern directly contacts both a side surface and a top surface of the semiconductor substrate.

9. A method for manufacturing a semiconductor device, the method comprising:

forming a sacrificial pattern and an active pattern sequentially stacked on a semiconductor substrate;

removing the sacrificial pattern to form an empty space between the active pattern and the semiconductor substrate;

forming a first isolation dielectric layer covering a bottom surface of the active pattern;

forming a second isolation dielectric layer separated from the first isolation dielectric layer on the semiconductor substrate;

forming a semiconductor layer on the semiconductor substrate, the semiconductor layer filling the empty space and being separated from the semiconductor substrate by the second isolation dielectric layer;

patterning the semiconductor layer and the second isolation dielectric layer to expose a portion of the semiconductor substrate;

forming a connection layer on the exposed semiconductor substrate, the connection layer electrically connecting the semiconductor substrate to the semiconductor layer, and directly contacting the semiconductor layer; and

etching upper portions of the patterned semiconductor layer and the connection layer to form a semiconductor pattern and a connection pattern.

10. The method of claim 9, wherein forming the first isolation dielectric layer comprises performing a thermal oxidation process at a bottom surface of the active pattern, and

wherein forming the second isolation dielectric layer comprises performing a thermal oxidation process at a surface of the semiconductor substrate.

11. The method of claim 9, further comprising etching a portion of the semiconductor substrate to form a protruded portion.

12. The method of claim 11, wherein forming the sacrificial pattern, the active pattern and the protruded portion uses a same etching mask.

13. The method of claim 12, wherein a sidewall of the protruded portion is self-aligned relative to a sidewall of the active pattern.

14. The method of claim 9, wherein the semiconductor device includes, from a lowest to highest height, the semiconductor substrate, the semiconductor layer, and the active pattern, and wherein an upper surface of the active pattern and an upper surface of the connection pattern have same levels as or lower levels than a bottommost surface of the first isolation dielectric layer.

15. The method of claim 9, further comprising;

forming an insulating layer on the semiconductor substrate; and

forming a gate electrode extending in a length direction of the active pattern on the semiconductor substrate.

16. The method of claim 15, wherein the semiconductor device includes, from a lowest to highest height, the semiconductor substrate, the semiconductor layer, and the active pattern, and wherein an upper surface of the insulating layer has a substantially same level as an upper surface of the semiconductor pattern.

17. The method of claim 15, wherein the semiconductor device includes, from a lowest to highest height, the semiconductor substrate, the semiconductor layer, and the active pattern, and wherein an upper surface of the insulating layer has a lower level than an upper surface of the active pattern and a same level as or a higher level than an uppermost surface of the semiconductor pattern.

18. The method of claim 17, wherein a bottommost surface of the gate electrode has a lower level than the top surface of the active pattern.

19. The method of claim 9, wherein the connection layer directly contacts the semiconductor substrate.

20. The method of claim 19, wherein the connection layer directly contacts both a side surface and a top surface of the semiconductor substrate.