Microelectronic device
First Claim
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1. A microelectronic device, comprising:
- a thin film transistor including a zinc indium oxide semiconductor channel; and
an organic polymer passivation layer formed on said zinc indium oxide semiconductor channel.
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Abstract
A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.
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Citations
16 Claims
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1. A microelectronic device, comprising:
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a thin film transistor including a zinc indium oxide semiconductor channel; and an organic polymer passivation layer formed on said zinc indium oxide semiconductor channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of making a thin film transistor, comprising:
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forming a zinc indium oxide semiconductor channel; and forming an organic polymer passivation layer on said zinc indium oxide semiconductor channel. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification