Oxide semiconductor film and semiconductor device
First Claim
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1. An oxide semiconductor film essentially consisting of indium zinc oxide, the oxide semiconductor film comprising:
- a hexagonal crystal structure in which an a-b plane is substantially parallel to a surface of the oxide semiconductor film; and
a rhombohedral crystal structure in which an a-b plane is substantially parallel to the surface of the oxide semiconductor film.
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Abstract
Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.
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Citations
8 Claims
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1. An oxide semiconductor film essentially consisting of indium zinc oxide, the oxide semiconductor film comprising:
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a hexagonal crystal structure in which an a-b plane is substantially parallel to a surface of the oxide semiconductor film; and a rhombohedral crystal structure in which an a-b plane is substantially parallel to the surface of the oxide semiconductor film. - View Dependent Claims (2)
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3. An oxide semiconductor film essentially consisting of indium zinc oxide, the oxide semiconductor film comprising:
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a hexagonal crystal structure in which an a-b plane is substantially parallel to a surface of the oxide semiconductor film; and a rhombohedral crystal structure in which an a-b plane is substantially parallel to the surface of the oxide semiconductor film, wherein the hexagonal crystal structure is a crystal structure of an oxide semiconductor having a composition ratio of In;
Zn=1;
1, andwherein the rhombohedral crystal structure is a crystal structure of an oxide semiconductor having a composition ratio of In;
Zn=2;
1. - View Dependent Claims (4)
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5. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film essentially consisting of indium zinc oxide; a first insulating film provided between the gate electrode and the oxide semiconductor film; a source electrode and a drain electrode provided in contact with the oxide semiconductor film; and a second insulating film provided over the oxide semiconductor film, wherein the oxide semiconductor film includes a hexagonal crystal structure in which an a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which an a-b plane is substantially parallel to the surface of the oxide semiconductor film. - View Dependent Claims (6)
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7. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film essentially consisting of indium zinc oxide; a first insulating film provided between the gate electrode and the oxide semiconductor film; a source electrode and a drain electrode provided in contact with the oxide semiconductor film; and a second insulating film provided over the oxide semiconductor film, wherein the oxide semiconductor film includes a hexagonal crystal structure in which an a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which an a-b plane is substantially parallel to the surface of the oxide semiconductor film, wherein the hexagonal crystal structure is a crystal structure of an oxide semiconductor having a composition ratio of In;
Zn=1;
1, andwherein the rhombohedral crystal structure is a crystal structure of an oxide semiconductor having a composition ratio of In;
Zn=2;
1. - View Dependent Claims (8)
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Specification