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Method for manufacturing semiconductor device

  • US 8,686,425 B2
  • Filed: 08/14/2012
  • Issued: 04/01/2014
  • Est. Priority Date: 12/28/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate; and

    a transistor over the substrate, the transistor comprising;

    a gate electrode;

    an oxide semiconductor layer including a channel; and

    a gate insulating film interposed between the gate electrode and the oxide semiconductor layer,wherein the oxide semiconductor layer includes;

    a first oxide semiconductor layer including a first crystalline region;

    a second oxide semiconductor layer including a second crystalline region, the second oxide semiconductor layer being over the first oxide semiconductor layer; and

    a third oxide semiconductor layer including a third crystalline region, the third oxide semiconductor layer being over the second oxide semiconductor layer,wherein the second crystalline region includes a first crystal,wherein the third crystalline region includes a second crystal, andwherein each of a c-axis of the first crystal and a c-axis of the second crystal is aligned substantially perpendicular to a surface of the substrate.

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