LED structure with enhanced mirror reflectivity
First Claim
1. An LED chip, comprising:
- one or more LEDs, with each of said LEDs comprising;
an active region;
a first contact under said active region, said contact comprising a highly reflective mirror;
a barrier layer adjacent said mirror, said barrier layer smaller than said mirror such that it does not extend beyond the periphery of said mirror; and
an insulator adjacent said barrier layer, said active region, and at least one portion of said mirror not contacted by said barrier layer, said insulator comprising a first layer for preventing migration and a second layer having a low refractive index.
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Accused Products
Abstract
Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip.
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Citations
30 Claims
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1. An LED chip, comprising:
one or more LEDs, with each of said LEDs comprising; an active region; a first contact under said active region, said contact comprising a highly reflective mirror; a barrier layer adjacent said mirror, said barrier layer smaller than said mirror such that it does not extend beyond the periphery of said mirror; and an insulator adjacent said barrier layer, said active region, and at least one portion of said mirror not contacted by said barrier layer, said insulator comprising a first layer for preventing migration and a second layer having a low refractive index. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An LED chip, comprising:
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one or more LEDs mounted on a submount, with each of said LEDs comprising; an active region comprising a top semiconductor layer and a bottom semiconductor layer; a first contact below said active region, said first contact comprising a highly reflective mirror; a barrier layer adjacent said mirror, said barrier layer smaller than said mirror; and an insulator adjacent said barrier layer and adjacent portions of said mirror not contacted by said active region or by said barrier layer wherein at least part of one of said one or more barrier layers is a topside contact for said bottom semiconductor layer. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. An LED chip, comprising:
one or more LEDs, with each of said LEDs comprising; an active region comprising a n-GaN and a p-GaN layer; a first contact below said active region, said first contact comprising a highly reflective mirror; a barrier layer adjacent said mirror, said barrier layer smaller than said mirror; a second contact on said active region; and a dielectric layer in contact with said mirror, said barrier layer, and a metal bond layer. - View Dependent Claims (28, 29, 30)
Specification