Method of manufacturing a vertically-structured GaN-based light emitting diode

• US 8,686,450 B2
• Filed: 08/23/2007
• Issued: 04/01/2014
• Est. Priority Date: 05/10/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jae Hoon, Choi, Hee Seok, Oh, Jeong Tak, Lee, Su Yeol
• Primary Examiner(s): Vu, David
• Application Number:
  US11/892,445
• Publication Number:
  US 20070290225A1
• Time in Patent Office: 2,413 Days
• Field of Search: 257/79, 257/94, 257/96, 257/97, 257/103, 257/190, 257/E21.133, 257/E33.028, 438/29, 438 46- 48
• US Class Current: 257/94
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

Claims

1. A vertically-structured GaN-based light emitting diode, comprising:

a structure supporting layer;

a p-type electrode disposed on an upper or lower surface of the structure supporting layer;

a p-type GaN layer disposed on the structure supporting layer on which the p-type electrode is disposed;

an active layer disposed on the p-type GaN layer;

an n-type GaN layer disposed on the active layer and is doped with n-type impurities;

an undoped GaN layer disposed on the n-type GaN layer to cover an entire upper surface of the n-type GaN layer, and on which a plurality of concave patterns are periodically defined; and

an n-type electrode disposed on the undoped GaN layer,

wherein a doping concentration of the n-type GaN layer gradually increases from a portion thereof where the n-type GaN layer is in contact with the undoped GaN layer.

2. The vertically-structured GaN-based light emitting diode according to claim 1, wherein:

when the p-type electrode is disposed on the lower surface of the structure supporting layer, the structure supporting layer includes any one selected from the group consisting of a conductive substrate and a plated layer, and

when the p-type electrode is disposed on the upper surface of the structure supporting layer, the structure supporting layer includes any one selected from the group consisting of a silicon substrate and a plated layer.

3. The vertically-structured GaN-based light emitting diode according to claim 1,

wherein the concave patterns with a hemispheric shape are defined such that the depth thereof ranges from 0.1 to 5 μ

m, the diameter thereof ranges from 0.5 to 5 μ

m, and the pattern period thereof ranges from 0.5 to 5 μ

m.

4. The vertically-structured GaN-based light emitting diode according to claim 1,

wherein the thickness of the undoped GaN layer ranges from 0.1 to 1 μ

m.

5. The vertically-structured GaN-based light emitting diode according to claim 1 further including a transparent conducting oxide (TCO) layer disposed on the undoped GaN layer.