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Method of manufacturing a vertically-structured GaN-based light emitting diode

  • US 8,686,450 B2
  • Filed: 08/23/2007
  • Issued: 04/01/2014
  • Est. Priority Date: 05/10/2005
  • Status: Active Grant
First Claim
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1. A vertically-structured GaN-based light emitting diode, comprising:

  • a structure supporting layer;

    a p-type electrode disposed on an upper or lower surface of the structure supporting layer;

    a p-type GaN layer disposed on the structure supporting layer on which the p-type electrode is disposed;

    an active layer disposed on the p-type GaN layer;

    an n-type GaN layer disposed on the active layer and is doped with n-type impurities;

    an undoped GaN layer disposed on the n-type GaN layer to cover an entire upper surface of the n-type GaN layer, and on which a plurality of concave patterns are periodically defined; and

    an n-type electrode disposed on the undoped GaN layer,wherein a doping concentration of the n-type GaN layer gradually increases from a portion thereof where the n-type GaN layer is in contact with the undoped GaN layer.

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