Power light emitting diode and method with current density operation

• US 8,686,458 B2
• Filed: 06/28/2013
• Issued: 04/01/2014
• Est. Priority Date: 09/18/2009
• Status: Active Grant

• Current Assignee: Korrus Incorporated (MKD Electric, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: Krames, Michael R., D'Evelyn, Mark P., Raring, James W., Katona, Thomas M.
• Primary Examiner(s): VU, JIMMY T
• Application Number:
  US13/931,359
• Publication Number:
  US 20140021883A1
• Time in Patent Office: 277 Days
• Field of Search: 257/79, 257/98, 257/E33, 315/291, 315/307, 315/308
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H05B 47/10 Controlling the light source

Abstract

A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm² and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Claims

1. A method of using a light emitting diode, the method comprising:

providing a fixture comprising the light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate having a surface region; and

at least one active region formed overlying the surface region;

a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region; and

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

2. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is characterized by a growth on a non-polar orientation.

3. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is characterized by a growth orientation in on at least one of a plurality of semi-polar crystal planes selected from the (10-1-1), (11-22), (20-21), (20-2-1), (30-31), (30-3-1), (30-32), and (30-3-2) crystal plane, and an offcut of any one of these planes within +/−

5 degrees toward the c-direction and/or the a-direction.

4. The method of claim 1, further comprising at least one phosphor operably coupled to the at least one active region to produce a white light emission.

5. The method of claim 1, further comprising a junction area from about 0.0002 mm² to about 1 mm².

6. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate comprises at least one region characterized by a surface dislocation density below about 10⁶ cm⁻

2.

7. The method of claim 1, further comprising an n-type contact electrically coupled to a first side of the at least one active region and a p-type contact electrically coupled to a second side of the at least one active region to form a vertically conducting characteristic.

8. The method of claim 1, wherein the at least one active region is characterized by a junction temperature greater than about 100 degrees Celsius.

9. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is characterized by an optical absorption coefficient of less than about 3 cm⁻

1 at wavelengths between about 385 nanometers and about 750 nanometers.

10. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is characterized by a resistivity less than about 0.050 ohm-cm.

11. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is an n-type semiconductor, with a carrier concentration n between about 10¹⁶ cm⁻

3 and 10²⁰ cm<sup>−

3</sup> and a carrier mobility η

, in units of centimeters squared per volt-second, such that the logarithm to the base 10 of η

is greater than about −

0.018557n³+1.0671n²−

20.599n+135.49.

12. The method of claim 1, wherein the at least one active region comprises a total active layer thickness of at least 20 nm.

13. The method of claim 1, wherein the current density is from 400 Amps/cm² to 800 Amps/cm².

14. The method of claim 1, wherein the current density is from 200 Amps/cm² to 1,000 Amps/cm².

15. The method of claim 1, wherein the current density is from 500 Amps/cm² to 1,000 Amps/cm².

16. The method of claim 1, wherein the current density is from 1,000 Amps/cm² to 2,000 Amps/cm².

17. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is characterized by a growth on a polar orientation.

18. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is grown epitaxially, ammonothermally, by hydride vapor phase-epitaxy, by metalorganic chemical vapor deposition, by molecular beam epitaxy, by liquid phase epitaxy, by a flux method, or by a combination of any of the foregoing.

19. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate comprises at least one region characterized by a surface dislocation density below about 10⁷ cm⁻

2.

20. The method of claim 1, wherein the light emitting diode is operable in a continuous wave mode.

21. The method of claim 1, wherein the light emitting diode is operable in a pulsed mode.

22. The method of claim 1, wherein the light emitting diode is characterized by a lumens per active junction area greater than 300 lm/mm², for a warm white emission with a correlated color temperature (CCT) of less than about 5,000K, and a color rendering index (CRI) greater than 75.

23. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is characterized by a growth on a polar orientation.

24. The method of claim 1, wherein the bulk gallium and nitrogen containing substrate is characterized by a growth on a c-plane orientation.

25. A method of using a light emitting diode, the method comprising:

providing a fixture comprising the light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate comprising a surface region characterized by a c-plane orientation;

one or more n-type epitaxial layers overlying the surface region;

at least one active region formed overlying the one or more n-type epitaxial layers, wherein the at least one active region comprises one or more active layers, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

one or more p-type epitaxial layers overlying the at least one active region;

at least one reflective p-type contact overlying the one or more p-type epitaxial layers and electrically coupled to a first side of the at least one active region; and

at least one n-type contact electrically coupled to a second side of the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

26. The method of claim 25, wherein the c-plane is selected from the (0001) plane, the (000-1) plane, and an offcut of any one of these planes.

27. The method of claim 25, further comprising at least one phosphor operably coupled to the at least one active region to produce a white light emission.

28. The method of claim 25, further comprising a junction area from about 0.0002 mm² to about 1 mm².

29. The method of claim 25, wherein the bulk gallium and nitrogen containing substrate comprises at least one region characterized by a surface dislocation density below about 10⁶ cm⁻

2.

30. The method of claim 25, wherein the active region is characterized by a junction temperature greater than about 100 degrees Celsius.

31. The method of claim 25, wherein the bulk gallium and nitrogen containing substrate is characterized by an optical absorption coefficient of less than about 3 cm⁻

1 at wavelengths between about 385 nanometers and about 750 nanometers.

32. The method of claim 25, wherein the bulk gallium and nitrogen containing substrate is characterized by a resistivity less than about 0.050 ohm-cm.

33. The method of claim 25, wherein the bulk gallium and nitrogen containing substrate is an n-type semiconductor, with a carrier concentration n between about 10¹⁶ cm⁻

3 and 10²⁰ cm<sup>−

3</sup> and a carrier mobility η

, in units of centimeters squared per volt-second, such that the logarithm to the base 10 of η

is greater than about −

0.018557n³+1.0671n²-20.599n+135.49.

34. The method of claim 25, wherein the at least one active region comprises a total active layer thickness of at least 20 nm.

35. The method of claim 25, wherein the current density is from 400 Amps/cm² to 800 Amps/cm².

36. The method of claim 25, wherein the current density is from 200 Amps/cm² to 1,000 Amps/cm².

37. The method of claim 25, wherein the current density is from 500 Amps/cm² to 1,000 Amps/cm².

38. The method of claim 25, wherein the current density is from 1,000 Amps/cm² to 2,000 Amps/cm².

39. The method of claim 25, wherein the at least one n-type contact is adjacent the at least one n-type epitaxial layer, is adjacent the substrate, or a combination thereof.

40. The method of claim 25, wherein the bulk gallium and nitrogen containing substrate is grown epitaxially, ammonothermally, by hydride vapor phase-epitaxy, by metalorganic chemical vapor deposition, by molecular beam epitaxy, by liquid phase epitaxy, by a flux method, or by a combination of any of the foregoing.

41. The method of claim 25, wherein the bulk gallium and nitrogen containing substrate comprises at least one region characterized by a surface dislocation density below about 10⁷ cm⁻

2.

42. The method of claim 25, wherein the light emitting diode is operable in a continuous wave mode.

43. The method of claim 25, wherein the light emitting diode is operable in a pulsed mode.

44. The method of claim 25, wherein the light emitting diode is characterized by a lumens per active junction area of greater than 300 lm/mm², for a warm white emission with a correlated color temperature (CCT) of less than about 5,000K, and a color rendering index (CRI) greater than 75.

45. A method of using a light emitting diode, the method comprising:

providing a fixture comprising a light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate having a surface region characterized by a semipolar orientation; and

at least one active region formed overlying the surface region, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

46. The method of claim 45, wherein the semipolar orientation is selected from the (10-1-1), (11-22), (20-21), (20-2-1), (30-31), (30-3-1), (30-32), and (30-3-2) crystal plane, and an offcut of any one of these planes within +/−

5 degrees toward the c-direction and/or the a-direction.

47. The method of claim 45, further comprising at least one phosphor operably coupled to the at least one active region to produce a white light emission.

48. The method of claim 45, further comprising a junction area from about 0.0002 mm² to about 1 mm².

49. The method of claim 45, wherein the bulk gallium and nitrogen containing substrate comprises at least one region characterized by a surface dislocation density below about 10⁶ cm⁻

2.

50. The method of claim 45, further comprising an n-type contact electrically coupled to a first side of the at least one active region and a p-type contact electrically coupled to a second side of the at least one active region to form a vertically conducting characteristic.

51. The method of claim 45, wherein the active region is characterized by a junction temperature greater than about 100 degrees Celsius.

52. The method of claim 45, wherein the bulk gallium and nitrogen containing substrate is characterized by an optical absorption coefficient of less than about 3 cm⁻

1 at wavelengths between about 385 nanometers and about 750 nanometers.

53. The method of claim 45, wherein the bulk gallium and nitrogen containing substrate is characterized by a resistivity less than about 0.050 ohm-cm.

54. The method of claim 45, wherein the bulk gallium and nitrogen containing substrate is an n-type semiconductor, with a carrier concentration n between about 10¹⁶ cm⁻

3 and 10²⁰ cm<sup>−

3</sup> and a carrier mobility η

, in units of centimeters squared per volt-second, such that the logarithm to the base 10 of η

is greater than about −

0.018557n³+1.0671n²-20.599n+135.49.

55. The method of claim 45, wherein the at least one active region comprises a total active layer thickness of at least 20 nm.

56. The method of claim 45, wherein the current density is from 400 Amps/cm² to 800 Amps/cm².

57. The method of claim 45, wherein the current density is from 200 Amps/cm² to 1,000 Amps/cm².

58. The method of claim 45, wherein the current density is from 500 Amps/cm² to 1,000 Amps/cm².

59. The method of claim 45, wherein the current density is from 1,000 Amps/cm² to 2,000 Amps/cm².

60. The method of claim 45, wherein the bulk gallium and nitrogen containing substrate is grown epitaxially, ammonothermally, by hydride vapor phase-epitaxy, by metalorganic chemical vapor deposition, by molecular beam epitaxy, by liquid phase epitaxy, by a flux method, or by a combination of any of the foregoing.

61. The method of claim 45, wherein the bulk gallium and nitrogen containing substrate comprises at least one region characterized by a surface dislocation density below about 10⁷ cm⁻

2.

62. The method of claim 45, wherein the light emitting diode is operable in a continuous wave mode.

63. The method of claim 45, wherein the light emitting diode is operable in a pulsed mode.

64. The method of claim 45, wherein the light emitting diode is characterized by a lumens per active junction area greater than 300 lm/mm², for a warm white emission with a correlated color temperature (CCT) of less than about 5,000K, and a color rendering index (CRI) greater than 75.

65. A method of using a light emitting diode, the method comprising:

providing a fixture comprising a light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate having a surface region characterized by a nonpolar orientation; and

at least one active region formed overlying the surface region, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

66. The method of claim 65, wherein the nonpolar orientation is selected from the (10-10) plane and a miscut from 0.1 degrees to 3 degrees toward the (0001) plane or the (1-210) plane.

67. The method of claim 65, further comprising at least one phosphor operably coupled to the at least one active region to produce a white light emission.

68. The method of claim 65, further comprising a junction area from about 0.0002 mm² to about 1 mm².

69. The method of claim 65, wherein the bulk gallium and nitrogen containing substrate comprises at least one region characterized by a surface dislocation density below about 10⁶ cm⁻

2.

70. The method of claim 65, further comprising an n-type contact electrically coupled to a first side of the at least one active region and a p-type contact electrically coupled to a second side of the at least one active region to form a vertically conducting characteristic.

71. The method of claim 65, wherein the active region is characterized by a junction temperature greater than about 100 degrees Celsius.

72. The method of claim 65, wherein the bulk gallium and nitrogen containing substrate is characterized by an optical absorption coefficient of less than about 3 cm⁻

1 at wavelengths between about 385 nanometers and about 750 nanometers.

73. The method of claim 65, wherein the bulk gallium and nitrogen containing substrate is characterized by a resistivity less than about 0.050 ohm-cm.

74. The method of claim 65, wherein the bulk gallium and nitrogen containing substrate is an n-type semiconductor, with a carrier concentration n between about 10¹⁶ cm⁻

3 and 10²⁰ cm<sup>−

3</sup> and a carrier mobility η

, in units of centimeters squared per volt-second, such that the logarithm to the base 10 of η

is greater than about −

0.018557n³+1.0671n²-20.599n+135.49.

75. The method of claim 65, wherein the at least one active region comprises a total active layer thickness of at least 20 nm.

76. The method of claim 65, wherein the current density is from 400 Amps/cm² to 800 Amps/cm².

77. The method of claim 65, wherein the current density is from 200 Amps/cm² to 1,000 Amps/cm².

78. The method of claim 65, wherein the current density is from 500 Amps/cm² to 1,000 Amps/cm².

79. The method of claim 65, wherein the current density is from 1,000 Amps/cm² to 2,000 Amps/cm².

80. The method of claim 65, wherein the bulk gallium and nitrogen containing substrate is grown epitaxially, ammonothermally, by hydride vapor phase-epitaxy, by metalorganic chemical vapor deposition, by molecular beam epitaxy, by liquid phase epitaxy, by a flux method, or by a combination of any of the foregoing.

81. The method of claim 65, wherein the bulk gallium and nitrogen containing substrate comprises at least one region characterized by a surface dislocation density below about 10⁷ cm⁻

2.

82. The method of claim 65, wherein the light emitting diode is operable in a continuous wave mode.

83. The method of claim 65, wherein the light emitting diode is operable in a pulsed mode.

84. The method of claim 65, wherein the light emitting diode is characterized by a lumens per active junction area greater than 300 lm/mm², for a warm white emission with a correlated color temperature (CCT) of less than about 5,000K, and a color rendering index (CRI) greater than 75.

85. A method of using a lighting fixture, the method comprising:

providing a lighting fixture comprising a light emitting diode, wherein the light emitting diode comprises;

a bulk gallium and nitrogen containing substrate having a surface region; and

at least one active region formed overlying the surface region;

a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region; and

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

86. A method of using a lighting fixture, the method comprising:

providing a lighting fixture comprising a light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate comprising a surface region characterized by a c-plane orientation;

one or more n-type epitaxial layers overlying the surface region;

at least one active region formed overlying the one or more n-type epitaxial layers, wherein the at least one active region comprises one or more active layers, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

one or more p-type epitaxial layers overlying the at least one active region;

at least one reflective p-type contact overlying the one or more p-type epitaxial layers and electrically coupled to a first side of the at least one active region; and

at least one n-type contact electrically coupled to a second side of the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

87. A method of using a lighting fixture, the method comprising:

providing a lighting fixture comprising a light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate having a surface region characterized by a semipolar orientation; and

at least one active region formed overlying the surface region, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

88. A method of using a lighting fixture, the method comprising:

providing a lighting fixture comprising a light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate having a surface region characterized by a nonpolar orientation; and

at least one active region formed overlying the surface region, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

89. A method of using a lamp comprising, the method comprising:

providing a lamp comprising a light emitting diode, wherein the light emitting diode comprises;

a bulk gallium and nitrogen containing substrate having a surface region; and

at least one active region formed overlying the surface region;

a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region; and

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

90. The method of claim 89, wherein the lamp is a replacement lamp.

91. The method of claim 89, wherein the lamp conforms to a form factor selected from an A-lamp, a fluorescent tube, a compact fluorescent lamp (CFL), a metallic reflector (MR) lamp, an MR16 lamp, a parabolic reflector (PAR) lamp, a reflector bulb (R), a single end quartz halogen lamp, a double end quartz halogen lamp, a candelabra, a globe bulb, a high bay lamp, a troffer lamp, and a cobra head lamp.

92. A method of using a lamp, the method comprising:

providing a lamp comprising the light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate comprising a surface region characterized by a c-plane orientation;

one or more n-type epitaxial layers overlying the surface region;

at least one active region formed overlying the one or more n-type epitaxial layers, wherein the at least one active region comprises one or more active layers, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

one or more p-type epitaxial layers overlying the at least one active region;

at least one reflective p-type contact overlying the one or more p-type epitaxial layers and electrically coupled to a first side of the at least one active region; and

at least one n-type contact electrically coupled to a second side of the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

93. The method of claim 92, wherein the lamp is a replacement lamp.

94. The method of claim 92, wherein the lamp conforms to a form factor selected from an A-lamp, a fluorescent tube, a compact fluorescent lamp (CFL), a metallic reflector (MR) lamp, an MR16 lamp, a parabolic reflector (PAR) lamp, a reflector bulb (R), a single end quartz halogen lamp, a double end quartz halogen lamp, a candelabra, a globe bulb, a high bay lamp, a troffer lamp, and a cobra head lamp.

95. A method using a lamp comprising a light emitting diode, the method comprising:

providing a lamp comprising a light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate having a surface region characterized by a semipolar orientation; and

at least one active region formed overlying the surface region, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

96. The method of claim 95, wherein the lamp is a replacement lamp.

97. The method of claim 95, wherein the lamp conforms to a form factor selected from an A-lamp, a fluorescent tube, a compact fluorescent lamp (CFL), a metallic reflector (MR) lamp, an MR16 lamp, a parabolic reflector (PAR) lamp, a reflector bulb (R), a single end quartz halogen lamp, a double end quartz halogen lamp, a candelabra, a globe bulb, a high bay lamp, a troffer lamp, and a cobra head lamp.

98. A method of using a lamp, the method comprising:

providing a lamp comprising a light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate having a surface region characterized by a nonpolar orientation; and

at least one active region formed overlying the surface region, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

99. The method of claim 98, wherein the lamp is a replacement lamp.

100. The method of claim 98, wherein the lamp conforms to a form factor selected from an A-lamp, a fluorescent tube, a compact fluorescent lamp (CFL), a metallic reflector (MR) lamp, an MR16 lamp, a parabolic reflector (PAR) lamp, a reflector bulb (R), a single end quartz halogen lamp, a double end quartz halogen lamp, a candelabra, a globe bulb, a high bay lamp, a troffer lamp, and a cobra head lamp.

101. A method of using a lamp, wherein the lamp conforms to a MR16 form factor and comprises a light emitting diode, the method comprising:

providing the lamp conforming to a MR16 form factor and comprising a light emitting diode, the light emitting diode comprising;

a bulk gallium and nitrogen containing substrate having a surface region characterized by a c-plane orientation;

at least one active region formed overlying the surface region, a current density from 175 Amps/cm² to 2,000 Amps/cm² characterizing the at least one active region; and

at least one phosphor operably coupled to the at least one active region to produce a white light emission;

wherein the light emitting diode is characterized by an external quantum efficiency (EQE) of at least 50%, and a peak emission wavelength between about 385 nm and about 480 nm; and

emitting electromagnetic radiation having the peak emission wavelength between about 385 nm and 480 nm.

102. The method of claim 101, wherein the current density is from 400 Amps/cm² to 800 Amps/cm².

103. The method of claim 101, wherein the current density is from 200 Amps/cm² to 1,000 Amps/cm².

104. The method of claim 101, wherein the current density is from 500 Amps/cm² to 1,000 Amps/cm².

105. The method of claim 101, wherein the current density is from 1,000 Amps/cm² to 2,000 Amps/cm².

106. The method of claim 101, wherein the light emitting diode is characterized by a lumens per active junction area of greater than 300 lm/mm², for a warm white emission with a correlated color temperature (CCT) of less than about 5,000K, and a color rendering index (CRI) greater than 75.