Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
First Claim
1. A light emitting device , comprising:
- a semipolar III-nitride film including a light emitting device structure, wherein;
the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a substrate, andone or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current and at a current density of no more than 278 Amps per centimeter square.
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Abstract
A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
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Citations
26 Claims
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1. A light emitting device , comprising:
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a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a substrate, and one or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current and at a current density of no more than 278 Amps per centimeter square. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for fabricating a device, comprising:
growing a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a nitride substrate, and the semipolar III-nitride active layers have one or more material properties such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current and at a current density of no more than 278 Amps per centimeter square. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A light emitting device, comprising:
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a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes one or more seimpolar III-nitride active lavers grown on or above a surface of a substrate, one or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current, and a semipolar orientation and the one or more material properties of the semipolar III-nitride active layers are such that the light emitting device structure has a peak External Quantum Efficiency (EQE) at a current density of no more than 222 Amps per centimeter square and a drop in the EQE of no more than 51% at a current density of at least 278 Amps per centimeter square, as compared to the peak EQE.
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Specification