Method for manufacturing a micromechanical component, and micromechanical component

• US 8,687,255 B2
• Filed: 07/06/2009
• Issued: 04/01/2014
• Est. Priority Date: 08/12/2008
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Finkbeiner, Stefan, Pirk, Tjalf, Friese, Christoph
• Primary Examiner(s): Phan, James
• Application Number:
  US13/057,411
• Publication Number:
  US 20110279919A1
• Time in Patent Office: 1,730 Days
• Field of Search: 3591981-1994, 3592006-2008, 359/221.2, 3592231-2242, 359/291, 359/298, 359/295, 310/309, 257/414, 438/8, 438/69, 438/72, 438689-692, 438/707, 438/708, 438/719, 438/723
• US Class Current: 359/224.1
• CPC Class Codes: B81B 2201/033 Comb drives
• CPC Class Codes: B81C 1/00166 Electrodes
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

Abstract

A method for manufacturing a micromechanical component is described, including the steps of: forming a first etch stop layer on a base substrate, the first etch stop layer being formed in such a way that it has a first pattern of through-cutouts; forming a first electrode-material layer on the first etch stop layer; forming a second etch stop layer on the first electrode-material layer, the second etch stop layer being formed in such a way that it has a second pattern of through-cutouts differing from the first pattern; forming a second electrode-material layer on the second etch stop layer; forming a patterned mask on the second electrode-material layer; and carrying out a first etching step in a first direction and a second etching step in a second direction counter to the first direction in order to etch at least one first electrode unit out of the first electrode-material layer and to etch at least one second electrode unit out of the second electrode-material layer. Also described are micromechanical components.

Claims

1. A method for manufacturing a micromechanical component, comprising:

forming a first etch stop layer on a base substrate, the first etch stop layer being formed in such a way that it has a first pattern of through-cutouts;

forming a first electrode-material layer on the first etch stop layer;

forming a second etch stop layer on the first electrode-material layer, the second etch stop layer being formed in such a way that it has a second pattern of through-cutouts differing from the first pattern;

forming a second electrode-material layer on the second etch stop layer;

forming a patterned mask on the second electrode-material layer; and

carrying out a first etching step in a first direction and a second etching step in a second direction counter to the first direction to etch at least one first electrode unit out of the first electrode-material layer, and to etch at least one second electrode unit out of the second electrode-material layer.

2. The manufacturing method as recited in claim 1, wherein at least one of the first electrode-material layer and the second electrode-material layer is formed as polysilicon layers using an epitaxial deposition process.

3. The manufacturing method as recited in claim 1, wherein at least one of the first etch stop layer and the second etch stop layer is formed of silicone oxide.

4. The manufacturing method as recited in claim 1, wherein the mask on the second electrode-material layer is patterned in such a way that it has a third pattern of through-cutouts differing from the first pattern and the second pattern.

5. The manufacturing method as recited in claim 4, wherein at least one partial surface of the second etch stop layer is formed in such a way that it has equidistantly disposed cutouts having equal extensions, and a distance between the equidistantly disposed cutouts corresponds to width of the electrode fingers of the first electrode unit and the second electrode unit.

6. The manufacturing method as recited in claim 5, wherein at least one partial surface of the first etch stop layer is formed in such a way that it has equidistantly disposed cutouts having equal extensions, and a distance and the extensions of the equidistantly disposed cutouts are determined in such a way that, given a projection of the partial surface of the second etch stop layer onto the partial surface of the first etch stop layer, every second intermediate area between the equidistantly disposed cutouts of the partial surface of the second etch stop layer is projected onto a cutout in the partial surface of the first etch stop layer.

7. The manufacturing method as recited in claim 1, wherein at least one of the first etch stop layer and the second etch stop layer is made of at least one bottom insulating layer, a middle conductive layer which at least partially covers the bottom insulating layer, and a top insulating layer at least partially covering the middle conductive layer.

8. The manufacturing method as recited in claim 7, wherein the middle conductive layer is formed as at least one conductor.

9. The manufacturing method as recited in claim 1, further comprising:

forming a mirror plate at least partially from the second electrode-material layer, and forming a base element, fixedly disposed on a bottom side of the mirror plate, at least partially from the first electrode-material layer;

forming a frame mount; and

forming a spring, via which the mirror plate is joined to the frame mount, at least partially from the first electrode-material layer, the spring being attached to the base element in such a way that the spring runs at least partially along a bottom side of the mirror plate and the mirror plate is adjustable relative to the frame mount.