Multi-wavelength semiconductor laser device

• US 8,687,668 B2
• Filed: 12/05/2012
• Issued: 04/01/2014
• Est. Priority Date: 06/09/2009
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Okura, Yuji
• Primary Examiner(s): Stultz, Jessica
• Assistant Examiner(s): FORDE, DELMA ROSA
• Application Number:
  US13/705,685
• Publication Number:
  US 20130089116A1
• Time in Patent Office: 482 Days
• Field of Search: 372/36, 372/92, 372/107, 372/109, 257/666, 257/678, 257/380, 257/384, 257/688, 257/723, 257/732, 257/733, 257/690, 257/88, 257/89, 257/91, 257/95, 257/98, 257/99, 257/618, 438 25- 28, 362/231, 362/249.02, 362/227
• US Class Current: 372/107
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01S 5/02326 Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
• CPC Class Codes: H01S 5/40 Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30 H01S5/50 takes precedence
• CPC Class Codes: H01S 5/4037 with active layers in more than one orientation
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

A multi-wavelength semiconductor laser device includes a block having a rectangular groove with a bottom face and two side faces extending in a predetermined direction; and laser diodes with different light emission wavelengths mounted on the bottom face and the side faces of the groove in the block so that their laser beams are emitted in the predetermined direction.

Claims

1. A multi-wavelength semiconductor laser device comprising:

a stem having a top face;

a block having a bottom face mounted on the top face of the stem, wherein the block includes

a flat face transverse to the bottom face of the block and the top face of the stem, wherein the flat face includes first and second parts, and

a projection projecting outwardly from the flat face, in a direction generally parallel to the top face of the stem and the bottom face of the block, and located between the first and second parts of the flat face, wherein the projection includes

a front face, and

first and second side faces transverse to the flat face and transverse to the front face; and

first, second, and third laser diodes producing light at emission wavelengths that are different from each other, wherein

the first, second, and third laser diodes are mounted on the block so that light beams produced by the first, second, and third laser diodes are emitted transverse to the top face of the stem, and

the first laser diode is mounted on the first side face.

2. The multi-wavelength semiconductor laser device of claim 1, wherein

the second laser diode is mounted on the second side face, and

the third laser diode is mounted on the front face.

3. The multi-wavelength semiconductor laser device of claim 1 wherein the second and third laser diodes are respectively mounted on the first and second parts of the flat face.

4. The multi-wavelength semiconductor laser device of claim 1, wherein the second laser is mounted on the second side face, and the third laser diode is mounted on one of the first and second parts of the flat face.