Laminated structure for CIS based solar cell, and integrated structure and manufacturing method for CIS based thin-film solar cell
First Claim
1. A method for manufacturing a CIS based thin-film solar cell, comprising the steps of:
- making a back electrode on a substrate selected from the group consisting of glass and metal;
forming a p-type CIS based light absorbing layer on the back electrode;
forming a buffer layer formed of a thin film of a zinc oxide group directly on the p-type CIS based light absorbing layer; and
forming an n-type transparent conductive film formed of the thin film of a zinc oxide group on the buffer layer,wherein the buffer layer forming step is performed by an MOCVD method, anda substrate temperature of the buffer layer forming step is 190 to 300°
C. which is higher than the substrate temperature at the time of forming the n-type transparent conductive film for keeping a high resistivity of the buffer layer which is 500Ω
·
cm or higher by avoiding diffusion of dopant from the n-type transparent conductive film to the buffer layer.
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Accused Products
Abstract
This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500Ω·cm or higher.
9 Citations
4 Claims
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1. A method for manufacturing a CIS based thin-film solar cell, comprising the steps of:
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making a back electrode on a substrate selected from the group consisting of glass and metal; forming a p-type CIS based light absorbing layer on the back electrode; forming a buffer layer formed of a thin film of a zinc oxide group directly on the p-type CIS based light absorbing layer; and forming an n-type transparent conductive film formed of the thin film of a zinc oxide group on the buffer layer, wherein the buffer layer forming step is performed by an MOCVD method, and a substrate temperature of the buffer layer forming step is 190 to 300°
C. which is higher than the substrate temperature at the time of forming the n-type transparent conductive film for keeping a high resistivity of the buffer layer which is 500Ω
·
cm or higher by avoiding diffusion of dopant from the n-type transparent conductive film to the buffer layer. - View Dependent Claims (2, 3, 4)
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Specification
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- Resources
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Current AssigneeSolar Frontier K.K. (Idemitsu Kosan Company Limited)
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Original AssigneeShowa Shell Sekiyu Kabushiki Kaisha (Idemitsu Kosan Company Limited)
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InventorsHakuma, Hideki, Tabuchi, Katsuya, Fujiwara, Yosuke, Kushiya, Katsumi
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Primary Examiner(s)Ingham, John C
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Application NumberUS12/743,686Publication NumberTime in Patent Office1,960 DaysField of Search438/95, 438/94, 438/102, 257/E31.007, 257/E31.027, 136/265US Class Current438/95CPC Class CodesH01L 31/0296 including, apart from dopin...H01L 31/0749 including a AIBIIICVI compo...H01L 31/1836 comprising a growth substra...Y02E 10/541 CuInSe2 material PV cellsY02P 70/50 Manufacturing or production...
